Hybrid Amorphous/Nanocrystalline Silicon Schottky Diodes for High Frequency Rectification

We report hybrid amorphous (a-Si)/nanocrystalline (nc-Si) Schottky diodes for rectification at high frequencies. All fabrication steps are done at , making them compatible with processing on plastic. The diodes have a high current density (5 A/cm 2 at 1 V and 100 A/cm 2 at 2 V) and on-to-off current...

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Veröffentlicht in:IEEE electron device letters 2014-04, Vol.35 (4), p.425-427
Hauptverfasser: Sanz-Robinson, Josue, Rieutort-Louis, Warren, Yingzhe Hu, Liechao Huang, Verma, Naveen, Wagner, Sigurd, Sturm, James C.
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Sprache:eng
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Zusammenfassung:We report hybrid amorphous (a-Si)/nanocrystalline (nc-Si) Schottky diodes for rectification at high frequencies. All fabrication steps are done at , making them compatible with processing on plastic. The diodes have a high current density (5 A/cm 2 at 1 V and 100 A/cm 2 at 2 V) and on-to-off current ratio (over 1000 for bias voltages of 1/-8 V). A 0.01- mm 2 hybrid diode has a series resistance of 200 Ω and a capacitance of 7 pF, leading to a cutoff frequency of 110 MHz. As a half-wave rectifier driving a parallel 1- MΩ resistive and 100-nF capacitive load, the dc rectified voltage drops at frequencies , with a -3 dB point at 70 MHz.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2306940