Doping-Free Intrinsic Amorphous Silicon Thin-Film Solar Cell Having a Simple Structure of ///\hbox\hbox

Doping-Free Intrinsic Amorphous Silicon Thin-Film Solar Cell Having a Simple Structure of ///\hbox\hbox

We fabricated doping-free intrinsic amorphous silicon (i-a-Si) thin-film solar cells having a structure of glass/SnO 2 /MoO 3 /i-a-Si/LiF/Al. The short-circuit current density of the cell markedly increased while the open-circuit voltage and fill factor were low due to a lower work-function of the M...

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Veröffentlicht in:IEEE electron device letters 2014-01, Vol.35 (1), p.96-98
Hauptverfasser: Yang, Ji-Hwan, Kang, Sang Jung, Hong, Yunho, Lim, Koeng Su
Format: Artikel
Sprache:eng
Schlagworte:
Amorphous silicon
Doping
Doping free
Fabrication
Gases
Glass
i-a-Si solar cells
Junctions
LiF
Photovoltaic cells
{\rm MoO}_{3}
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Zusammenfassung:We fabricated doping-free intrinsic amorphous silicon (i-a-Si) thin-film solar cells having a structure of glass/SnO 2 /MoO 3 /i-a-Si/LiF/Al. The short-circuit current density of the cell markedly increased while the open-circuit voltage and fill factor were low due to a lower work-function of the MoO 3 than that of a conventional amorphous silicon carbide film. To solve these drawbacks, we UV-treated on the MoO 3 layer, obtaining a greatly enhanced conversion efficiency of 6.42%.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2289309