Nanometer-Scale RRAM

Nanometer-Scale RRAM

HfOx-based resistive random access memory with an active area down to few nanometers in diameter is fabricated and characterized. Scaling trends for forming and switching characteristics are presented. For the smallest device with an active area of few nanometers in diameter, ac switching endurance...

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Veröffentlicht in:IEEE electron device letters 2013-08, Vol.34 (8), p.1005-1007
Hauptverfasser: Zhang, Zhiping, Wu, Yi, Wong, H.-S. Philip, Wong, S. Simon
Format: Artikel
Sprache:eng
Schlagworte:
Bipolar switching
Electrodes
Electron devices
forming process
Hafnium compounds
Hafnium oxide ({\rm HfO}_{x})
Random access memory
Resistance
resistive random access memory (RRAM)
Switches
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Beschreibung
Zusammenfassung:HfOx-based resistive random access memory with an active area down to few nanometers in diameter is fabricated and characterized. Scaling trends for forming and switching characteristics are presented. For the smallest device with an active area of few nanometers in diameter, ac switching endurance of 10 8 cycles with more than 100 × resistance window is demonstrated. In addition, multiple resistance states are shown to be stable after 10 5 read cycles and 10 5 s baking at 150 ° C.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2265404