Quaternary Barrier InAlGaN HEMTs With f/f of 230/300 GHz
Depletion-mode quaternary barrier In 0.13 Al 0.83 Ga 0.04 N high-electron-mobility transistors (HEMTs) with regrown ohmic contacts and T-gates on a SiC substrate have been fabricated. Devices with 40-nm-long footprints show a maximum output current density of 1.8 A/mm, an extrinsic dc transconductan...
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| Veröffentlicht in: | IEEE electron device letters 2013-03, Vol.34 (3), p.378-380 |
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| creator | Ronghua Wang Guowang Li Karbasian, G. Jia Guo Bo Song Yuanzheng Yue Zongyang Hu Laboutin, O. Yu Cao Johnson, W. Snider, G. Fay, P. Jena, D. Xing, H. G. |
| description | Depletion-mode quaternary barrier In 0.13 Al 0.83 Ga 0.04 N high-electron-mobility transistors (HEMTs) with regrown ohmic contacts and T-gates on a SiC substrate have been fabricated. Devices with 40-nm-long footprints show a maximum output current density of 1.8 A/mm, an extrinsic dc transconductance of 770 mS/mm, and cutoff frequencies fT / f max of 230/300 GHz at the same bias, which give a record-high value of √ fT · f max = 263 GHz among all reported InAl(Ga)N barrier HEMTs. The device speed shows good scalability with gate length despite the onset of short-channel effects due to the lack of a back barrier. An effective electron velocity of 1.36 ×10 7 cm/s, which is comparable with that in the state-of-the-art deeply scaled AlN/GaN HEMTs, has been extracted from the gate-length dependence of fT for gate lengths from 100 to 40 nm. |
| doi_str_mv | 10.1109/LED.2013.2238503 |
| format | Article |
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An effective electron velocity of 1.36 ×10 7 cm/s, which is comparable with that in the state-of-the-art deeply scaled AlN/GaN HEMTs, has been extracted from the gate-length dependence of fT for gate lengths from 100 to 40 nm.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2013.2238503</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Cutoff frequency ; Delay ; electron velocity ; Gallium nitride ; HEMTs ; HFET ; high-electron-mobility transistor (HEMT) ; Logic gates ; mobility ; MODFETs ; Ohmic contacts ; quaternary ; regrown ohmic contact ; T-gate</subject><ispartof>IEEE electron device letters, 2013-03, Vol.34 (3), p.378-380</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c193t-7cf5f5beb10d0f9bd64bc0fb2a36ad428a379e535ba3a4d9d0e34a9f249a32823</citedby><cites>FETCH-LOGICAL-c193t-7cf5f5beb10d0f9bd64bc0fb2a36ad428a379e535ba3a4d9d0e34a9f249a32823</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6417951$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6417951$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ronghua Wang</creatorcontrib><creatorcontrib>Guowang Li</creatorcontrib><creatorcontrib>Karbasian, G.</creatorcontrib><creatorcontrib>Jia Guo</creatorcontrib><creatorcontrib>Bo Song</creatorcontrib><creatorcontrib>Yuanzheng Yue</creatorcontrib><creatorcontrib>Zongyang Hu</creatorcontrib><creatorcontrib>Laboutin, O.</creatorcontrib><creatorcontrib>Yu Cao</creatorcontrib><creatorcontrib>Johnson, W.</creatorcontrib><creatorcontrib>Snider, G.</creatorcontrib><creatorcontrib>Fay, P.</creatorcontrib><creatorcontrib>Jena, D.</creatorcontrib><creatorcontrib>Xing, H. G.</creatorcontrib><title>Quaternary Barrier InAlGaN HEMTs With f/f of 230/300 GHz</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Depletion-mode quaternary barrier In 0.13 Al 0.83 Ga 0.04 N high-electron-mobility transistors (HEMTs) with regrown ohmic contacts and T-gates on a SiC substrate have been fabricated. Devices with 40-nm-long footprints show a maximum output current density of 1.8 A/mm, an extrinsic dc transconductance of 770 mS/mm, and cutoff frequencies fT / f max of 230/300 GHz at the same bias, which give a record-high value of √ fT · f max = 263 GHz among all reported InAl(Ga)N barrier HEMTs. The device speed shows good scalability with gate length despite the onset of short-channel effects due to the lack of a back barrier. An effective electron velocity of 1.36 ×10 7 cm/s, which is comparable with that in the state-of-the-art deeply scaled AlN/GaN HEMTs, has been extracted from the gate-length dependence of fT for gate lengths from 100 to 40 nm.</description><subject>Cutoff frequency</subject><subject>Delay</subject><subject>electron velocity</subject><subject>Gallium nitride</subject><subject>HEMTs</subject><subject>HFET</subject><subject>high-electron-mobility transistor (HEMT)</subject><subject>Logic gates</subject><subject>mobility</subject><subject>MODFETs</subject><subject>Ohmic contacts</subject><subject>quaternary</subject><subject>regrown ohmic contact</subject><subject>T-gate</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9j8FKw0AURQdRMFb3gpv5gSTvzZtJMstaY1qIilBxGWaSGYzUViZxoV_flBZXd3PP5R7GbhESRNBpXT4kApASIahQQGcsQqWKGFRG5yyCXGJMCNkluxqGTwCUMpcRK15_zOjC1oRffm9C6F3gq-18U5lnviyf1gN_78cP7lPPd54LgpQAeLX8u2YX3mwGd3PKGXt7LNeLZVy_VKvFvI5b1DTGeeuVV9ZZhA68tl0mbQveCkOZ6aQoDOXaKVLWkJGd7sCRNNoLqQ2JQtCMwXG3DbthCM4336H_mu42CM3BvJnMm4N5czKfkLsj0jvn_uuZxFwrpD0UkFFf</recordid><startdate>201303</startdate><enddate>201303</enddate><creator>Ronghua Wang</creator><creator>Guowang Li</creator><creator>Karbasian, G.</creator><creator>Jia Guo</creator><creator>Bo Song</creator><creator>Yuanzheng Yue</creator><creator>Zongyang Hu</creator><creator>Laboutin, O.</creator><creator>Yu Cao</creator><creator>Johnson, W.</creator><creator>Snider, G.</creator><creator>Fay, P.</creator><creator>Jena, D.</creator><creator>Xing, H. G.</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201303</creationdate><title>Quaternary Barrier InAlGaN HEMTs With f/f of 230/300 GHz</title><author>Ronghua Wang ; Guowang Li ; Karbasian, G. ; Jia Guo ; Bo Song ; Yuanzheng Yue ; Zongyang Hu ; Laboutin, O. ; Yu Cao ; Johnson, W. ; Snider, G. ; Fay, P. ; Jena, D. ; Xing, H. 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G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quaternary Barrier InAlGaN HEMTs With f/f of 230/300 GHz</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2013-03</date><risdate>2013</risdate><volume>34</volume><issue>3</issue><spage>378</spage><epage>380</epage><pages>378-380</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Depletion-mode quaternary barrier In 0.13 Al 0.83 Ga 0.04 N high-electron-mobility transistors (HEMTs) with regrown ohmic contacts and T-gates on a SiC substrate have been fabricated. Devices with 40-nm-long footprints show a maximum output current density of 1.8 A/mm, an extrinsic dc transconductance of 770 mS/mm, and cutoff frequencies fT / f max of 230/300 GHz at the same bias, which give a record-high value of √ fT · f max = 263 GHz among all reported InAl(Ga)N barrier HEMTs. The device speed shows good scalability with gate length despite the onset of short-channel effects due to the lack of a back barrier. An effective electron velocity of 1.36 ×10 7 cm/s, which is comparable with that in the state-of-the-art deeply scaled AlN/GaN HEMTs, has been extracted from the gate-length dependence of fT for gate lengths from 100 to 40 nm.</abstract><pub>IEEE</pub><doi>10.1109/LED.2013.2238503</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Cutoff frequency Delay electron velocity Gallium nitride HEMTs HFET high-electron-mobility transistor (HEMT) Logic gates mobility MODFETs Ohmic contacts quaternary regrown ohmic contact T-gate |
| title | Quaternary Barrier InAlGaN HEMTs With f/f of 230/300 GHz |
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