Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode
A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The combination of an ohmic anode and a recessed Schottky gate is responsible for the low turn-on voltage and thus increases the forward current. In compa...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2013-02, Vol.34 (2), p.214-216 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 216 |
|---|---|
| container_issue | 2 |
| container_start_page | 214 |
| container_title | IEEE electron device letters |
| container_volume | 34 |
| creator | LEE, Jae-Gil PARK, Bong-Ryeol CHO, Chun-Hyung SEO, Kwang-Seok CHA, Ho-Young |
| description | A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The combination of an ohmic anode and a recessed Schottky gate is responsible for the low turn-on voltage and thus increases the forward current. In comparison with conventional Schottky diodes, the forward current at 1.5 V was increased by 2 to 3 times, whereas no breakdown-voltage degradation was observed. The proposed rectifier with an anode-to-cathode distance of 18 μm exhibited a turn-on voltage of 0.37 V, a forward current density of 92 mA/mm at 1.5 V, and a breakdown voltage of 1440 V. |
| doi_str_mv | 10.1109/LED.2012.2235403 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LED_2012_2235403</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6413168</ieee_id><sourcerecordid>26854297</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-a8e7950bbfdf04cf24bc1ecbf95e3b47bcfe9fb0682e8265e5b9a83cc67454ae3</originalsourceid><addsrcrecordid>eNo9kEtLAzEUhYMoWKt7wU02LtPmPcmy9KUwWNCqyyFJb2xkOlNmRsR_75SWLi5ncc93Fh9C94yOGKN2nM9nI04ZH3EulKTiAg2YUoZQpcUlGtBMMiIY1dfopm2_KWVSZnKAZnn9i9c_TUVWFf6oy859AZ6US_cy7o_UFXlL-BVCl2KCBn-mbouXroMNXm13KeBJVW_gFl1FV7Zwd8ohel_M19Mnkq-Wz9NJTgK3oiPOQGYV9T5uIpUhcukDg-CjVSC8zHyIYKOn2nAwXCtQ3jojQtCZVNKBGCJ63A1N3bYNxGLfpJ1r_gpGi4OFordQHCwUJws98nhE9q4NroyNq0JqzxzXRklus773cOwlADi_tWSCaSP-AbjiZFs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode</title><source>IEEE Electronic Library (IEL)</source><creator>LEE, Jae-Gil ; PARK, Bong-Ryeol ; CHO, Chun-Hyung ; SEO, Kwang-Seok ; CHA, Ho-Young</creator><creatorcontrib>LEE, Jae-Gil ; PARK, Bong-Ryeol ; CHO, Chun-Hyung ; SEO, Kwang-Seok ; CHA, Ho-Young</creatorcontrib><description>A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The combination of an ohmic anode and a recessed Schottky gate is responsible for the low turn-on voltage and thus increases the forward current. In comparison with conventional Schottky diodes, the forward current at 1.5 V was increased by 2 to 3 times, whereas no breakdown-voltage degradation was observed. The proposed rectifier with an anode-to-cathode distance of 18 μm exhibited a turn-on voltage of 0.37 V, a forward current density of 92 mA/mm at 1.5 V, and a breakdown voltage of 1440 V.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2012.2235403</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>AlGaN/GaN-on-Si ; Aluminum gallium nitride ; Anodes ; Applied sciences ; Breakdown voltage ; Diodes ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Gallium nitride ; gated ohmic anode ; HEMTs ; Logic gates ; rectifier ; Schottky barriers ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; turn-on voltage</subject><ispartof>IEEE electron device letters, 2013-02, Vol.34 (2), p.214-216</ispartof><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-a8e7950bbfdf04cf24bc1ecbf95e3b47bcfe9fb0682e8265e5b9a83cc67454ae3</citedby><cites>FETCH-LOGICAL-c293t-a8e7950bbfdf04cf24bc1ecbf95e3b47bcfe9fb0682e8265e5b9a83cc67454ae3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6413168$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54735</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6413168$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26854297$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>LEE, Jae-Gil</creatorcontrib><creatorcontrib>PARK, Bong-Ryeol</creatorcontrib><creatorcontrib>CHO, Chun-Hyung</creatorcontrib><creatorcontrib>SEO, Kwang-Seok</creatorcontrib><creatorcontrib>CHA, Ho-Young</creatorcontrib><title>Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The combination of an ohmic anode and a recessed Schottky gate is responsible for the low turn-on voltage and thus increases the forward current. In comparison with conventional Schottky diodes, the forward current at 1.5 V was increased by 2 to 3 times, whereas no breakdown-voltage degradation was observed. The proposed rectifier with an anode-to-cathode distance of 18 μm exhibited a turn-on voltage of 0.37 V, a forward current density of 92 mA/mm at 1.5 V, and a breakdown voltage of 1440 V.</description><subject>AlGaN/GaN-on-Si</subject><subject>Aluminum gallium nitride</subject><subject>Anodes</subject><subject>Applied sciences</subject><subject>Breakdown voltage</subject><subject>Diodes</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium nitride</subject><subject>gated ohmic anode</subject><subject>HEMTs</subject><subject>Logic gates</subject><subject>rectifier</subject><subject>Schottky barriers</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>turn-on voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEtLAzEUhYMoWKt7wU02LtPmPcmy9KUwWNCqyyFJb2xkOlNmRsR_75SWLi5ncc93Fh9C94yOGKN2nM9nI04ZH3EulKTiAg2YUoZQpcUlGtBMMiIY1dfopm2_KWVSZnKAZnn9i9c_TUVWFf6oy859AZ6US_cy7o_UFXlL-BVCl2KCBn-mbouXroMNXm13KeBJVW_gFl1FV7Zwd8ohel_M19Mnkq-Wz9NJTgK3oiPOQGYV9T5uIpUhcukDg-CjVSC8zHyIYKOn2nAwXCtQ3jojQtCZVNKBGCJ63A1N3bYNxGLfpJ1r_gpGi4OFordQHCwUJws98nhE9q4NroyNq0JqzxzXRklus773cOwlADi_tWSCaSP-AbjiZFs</recordid><startdate>20130201</startdate><enddate>20130201</enddate><creator>LEE, Jae-Gil</creator><creator>PARK, Bong-Ryeol</creator><creator>CHO, Chun-Hyung</creator><creator>SEO, Kwang-Seok</creator><creator>CHA, Ho-Young</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130201</creationdate><title>Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode</title><author>LEE, Jae-Gil ; PARK, Bong-Ryeol ; CHO, Chun-Hyung ; SEO, Kwang-Seok ; CHA, Ho-Young</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-a8e7950bbfdf04cf24bc1ecbf95e3b47bcfe9fb0682e8265e5b9a83cc67454ae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>AlGaN/GaN-on-Si</topic><topic>Aluminum gallium nitride</topic><topic>Anodes</topic><topic>Applied sciences</topic><topic>Breakdown voltage</topic><topic>Diodes</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium nitride</topic><topic>gated ohmic anode</topic><topic>HEMTs</topic><topic>Logic gates</topic><topic>rectifier</topic><topic>Schottky barriers</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>turn-on voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LEE, Jae-Gil</creatorcontrib><creatorcontrib>PARK, Bong-Ryeol</creatorcontrib><creatorcontrib>CHO, Chun-Hyung</creatorcontrib><creatorcontrib>SEO, Kwang-Seok</creatorcontrib><creatorcontrib>CHA, Ho-Young</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, Jae-Gil</au><au>PARK, Bong-Ryeol</au><au>CHO, Chun-Hyung</au><au>SEO, Kwang-Seok</au><au>CHA, Ho-Young</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2013-02-01</date><risdate>2013</risdate><volume>34</volume><issue>2</issue><spage>214</spage><epage>216</epage><pages>214-216</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The combination of an ohmic anode and a recessed Schottky gate is responsible for the low turn-on voltage and thus increases the forward current. In comparison with conventional Schottky diodes, the forward current at 1.5 V was increased by 2 to 3 times, whereas no breakdown-voltage degradation was observed. The proposed rectifier with an anode-to-cathode distance of 18 μm exhibited a turn-on voltage of 0.37 V, a forward current density of 92 mA/mm at 1.5 V, and a breakdown voltage of 1440 V.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2012.2235403</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2013-02, Vol.34 (2), p.214-216 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_LED_2012_2235403 |
| source | IEEE Electronic Library (IEL) |
| subjects | AlGaN/GaN-on-Si Aluminum gallium nitride Anodes Applied sciences Breakdown voltage Diodes Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gallium nitride gated ohmic anode HEMTs Logic gates rectifier Schottky barriers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices turn-on voltage |
| title | Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T08%3A56%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20Turn-On%20Voltage%20AlGaN/GaN-on-Si%20Rectifier%20With%20Gated%20Ohmic%20Anode&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=LEE,%20Jae-Gil&rft.date=2013-02-01&rft.volume=34&rft.issue=2&rft.spage=214&rft.epage=216&rft.pages=214-216&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2012.2235403&rft_dat=%3Cpascalfrancis_RIE%3E26854297%3C/pascalfrancis_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6413168&rfr_iscdi=true |