Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode

A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The combination of an ohmic anode and a recessed Schottky gate is responsible for the low turn-on voltage and thus increases the forward current. In compa...

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Veröffentlicht in:	IEEE electron device letters 2013-02, Vol.34 (2), p.214-216
Hauptverfasser:	LEE, Jae-Gil, PARK, Bong-Ryeol, CHO, Chun-Hyung, SEO, Kwang-Seok, CHA, Ho-Young
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN/GaN-on-Si Aluminum gallium nitride Anodes Applied sciences Breakdown voltage Diodes Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gallium nitride gated ohmic anode HEMTs Logic gates rectifier Schottky barriers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices turn-on voltage
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Beschreibung
Zusammenfassung:	A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The combination of an ohmic anode and a recessed Schottky gate is responsible for the low turn-on voltage and thus increases the forward current. In comparison with conventional Schottky diodes, the forward current at 1.5 V was increased by 2 to 3 times, whereas no breakdown-voltage degradation was observed. The proposed rectifier with an anode-to-cathode distance of 18 μm exhibited a turn-on voltage of 0.37 V, a forward current density of 92 mA/mm at 1.5 V, and a breakdown voltage of 1440 V.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2012.2235403