Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for \hbox-Based Structure

After high-temperature forming (HTF) and room-temperature forming treatments, the resistive switching behavior gets some improvements. The switching ratio is enhanced as the device undergoes the HTF process. Through the conduction mechanism analyses in the high-resistance state, Schottky emission an...

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Veröffentlicht in:	IEEE electron device letters 2013-02, Vol.34 (2), p.226-228
Hauptverfasser:	Yu-Ting Chen, Ting-Chang Chang, Po-Chun Yang, Jheng-Jie Huang, Hsueh-Chih Tseng, Hui-Chun Huang, Jyun-Bao Yang, Ann-Kuo Chu, Der-Shin Gan, Ming-Jinn Tsai, Sze, Simon M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Educational institutions Forming hbox{SiO}_{2} high temperature Ions nonvolatile memory Resistance resistance switch Sun Switches Temperature Tin
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