Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for \hbox-Based Structure

Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for \hbox-Based Structure

After high-temperature forming (HTF) and room-temperature forming treatments, the resistive switching behavior gets some improvements. The switching ratio is enhanced as the device undergoes the HTF process. Through the conduction mechanism analyses in the high-resistance state, Schottky emission an...

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Veröffentlicht in:IEEE electron device letters 2013-02, Vol.34 (2), p.226-228
Hauptverfasser: Yu-Ting Chen, Ting-Chang Chang, Po-Chun Yang, Jheng-Jie Huang, Hsueh-Chih Tseng, Hui-Chun Huang, Jyun-Bao Yang, Ann-Kuo Chu, Der-Shin Gan, Ming-Jinn Tsai, Sze, Simon M.
Format: Artikel
Sprache:eng
Schlagworte:
Educational institutions
Forming
hbox{SiO}_{2}
high temperature
Ions
nonvolatile memory
Resistance
resistance switch
Sun
Switches
Temperature
Tin
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Beschreibung
Zusammenfassung:After high-temperature forming (HTF) and room-temperature forming treatments, the resistive switching behavior gets some improvements. The switching ratio is enhanced as the device undergoes the HTF process. Through the conduction mechanism analyses in the high-resistance state, Schottky emission and Frenkel-Poole emission are fitted. In addition, after HTF treatment, the resistance of conductive filament decreases. The different high-resistance-state characteristics in the two devices can be attributed to more oxygen ions generated by the serious damage during HTF. Finally, the switching behavior activated by low-temperature forming process is employed to confirm the model.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2232276