Delay Analysis of Graphene Field-Effect Transistors
In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic...
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| Veröffentlicht in: | IEEE electron device letters 2012-03, Vol.33 (3), p.324-326 |
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| container_end_page | 326 |
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| container_title | IEEE electron device letters |
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| creator | Han Wang Hsu, Allen Dong Seup Lee Ki Kang Kim Jing Kong Palacios, Tomas |
| description | In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFET structures. |
| doi_str_mv | 10.1109/LED.2011.2180886 |
| format | Article |
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Solid state devices</subject><subject>Substrates</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kD1PwzAQhi0EEqGwI7FkYUy581fsseonUiWWMkcXxxZBIa3sLv33uGrV6YZ739PzHGOvCFNEsB_b5WLKAXHK0YAx-o4VqJSpQGlxzwqoJVYCQT-yp5R-AVDKWhZMLPxAp3I20nBKfSr3oVxHOvz40Zer3g9dtQzBu2O5izTmwHEf0zN7CDQk_3KdE_a9Wu7mm2r7tf6cz7aVE8oeKw6tcgqCa4l0G1RHJlMIbdEF2Wrvve2k45IrzkkR77TlYJSuLRndoRcTBpe7Lu5Tij40h9j_UTw1CM1ZusnSzVm6uUrnyvulcqDkaAgZ2vXp1uNKaWmkzbm3S67PGLe1zk_JEOIfG_1eyQ</recordid><startdate>20120301</startdate><enddate>20120301</enddate><creator>Han Wang</creator><creator>Hsu, Allen</creator><creator>Dong Seup Lee</creator><creator>Ki Kang Kim</creator><creator>Jing Kong</creator><creator>Palacios, Tomas</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120301</creationdate><title>Delay Analysis of Graphene Field-Effect Transistors</title><author>Han Wang ; Hsu, Allen ; Dong Seup Lee ; Ki Kang Kim ; Jing Kong ; Palacios, Tomas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-20b5c50fcbaa6bf5da80743691cf4b6eee9d4c242522a5a2d692085679a86d1e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Capacitance</topic><topic>Carrier velocity</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>chemical vapor deposition graphene</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Delay</topic><topic>delay analysis</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>graphene FET (GFET)</topic><topic>Logic gates</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Physics</topic><topic>Radio frequency</topic><topic>sapphire</topic><topic>Semiconductor electronics. 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Solid state devices</topic><topic>Substrates</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Han Wang</creatorcontrib><creatorcontrib>Hsu, Allen</creatorcontrib><creatorcontrib>Dong Seup Lee</creatorcontrib><creatorcontrib>Ki Kang Kim</creatorcontrib><creatorcontrib>Jing Kong</creatorcontrib><creatorcontrib>Palacios, Tomas</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Han Wang</au><au>Hsu, Allen</au><au>Dong Seup Lee</au><au>Ki Kang Kim</au><au>Jing Kong</au><au>Palacios, Tomas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Delay Analysis of Graphene Field-Effect Transistors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2012-03-01</date><risdate>2012</risdate><volume>33</volume><issue>3</issue><spage>324</spage><epage>326</epage><pages>324-326</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFET structures.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2011.2180886</doi><tpages>3</tpages></addata></record> |
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| issn | 0741-3106 1558-0563 |
| language | eng |
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| subjects | Applied sciences Capacitance Carrier velocity Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) chemical vapor deposition graphene Cross-disciplinary physics: materials science rheology Delay delay analysis Electronics Exact sciences and technology graphene FET (GFET) Logic gates Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Physics Radio frequency sapphire Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Transistors |
| title | Delay Analysis of Graphene Field-Effect Transistors |
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