Delay Analysis of Graphene Field-Effect Transistors

In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic...

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Veröffentlicht in:	IEEE electron device letters 2012-03, Vol.33 (3), p.324-326
Hauptverfasser:	Han Wang, Hsu, Allen, Dong Seup Lee, Ki Kang Kim, Jing Kong, Palacios, Tomas
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Carrier velocity Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) chemical vapor deposition graphene Cross-disciplinary physics: materials science rheology Delay delay analysis Electronics Exact sciences and technology graphene FET (GFET) Logic gates Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Physics Radio frequency sapphire Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Transistors
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Beschreibung
Zusammenfassung:	In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFET structures.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2011.2180886