Feasibility Study of \hbox/\hbox Resistive Random Access Memory in an Inverter Circuit for FPGA Applications

We proposed a Mo/SiO x /Pt resistive random access memory (RRAM) device as an alternative to static random access memory (SRAM) devices for field-programmable gate array (FPGA) applications. In order to evaluate the feasibility of our RRAM device for FPGA applications, we utilized an RRAM device + i...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE electron device letters 2011-12, Vol.32 (12), p.1665-1667
Hauptverfasser:	Sangsu Park, Jungho Shin, Cimino, S., Seungjae Jung, Joonmyoung Lee, Seonghyun Kim, Jubong Park, Wootae Lee, Myungwoo Son, Byunghun Lee, Pantisano, L., Hyunsang Hwang
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS integrated circuits Field programmable gate arrays Field-programmable gate array (FPGA) Inverters Nonvolatile memory Random access memory reconfigurable logic Resistance resistive random access memory (RRAM) Switches
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!