Feasibility Study of \hbox/\hbox Resistive Random Access Memory in an Inverter Circuit for FPGA Applications

We proposed a Mo/SiO x /Pt resistive random access memory (RRAM) device as an alternative to static random access memory (SRAM) devices for field-programmable gate array (FPGA) applications. In order to evaluate the feasibility of our RRAM device for FPGA applications, we utilized an RRAM device + inverter structure and confirmed its successful operation under various operational schemes, multilevel operation by controlling bias condition, and immunity against read disturbance and a retention test at high temperature. From the nonvolatile and reliable characteristics of our RRAM device, unlike that of SRAM devices, it holds promise to enable reconfigurable logic applications with significantly reduced logic-gate density and power consumption.