High-Performance Ge MOS Capacitors by \hbox Plasma Passivation and \hbox Ambient Annealing

High-Performance Ge MOS Capacitors by \hbox Plasma Passivation and \hbox Ambient Annealing

Very promising capacitance-voltage (C-V) characteristics of capacitors on both p- and n-type Ge substrates are demonstrated by using an in situ O 2 plasma passivation and an O 2 ambient annealing. The capacitors exhibited a small equivalent oxide thickness of ~1.5 nm and a low D it (; 0.51 eV). The...

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Veröffentlicht in:IEEE electron device letters 2011-12, Vol.32 (12), p.1656-1658
Hauptverfasser: Qi Xie, Shaoren Deng, Schaekers, M., Lin, D., Caymax, M., Delabie, A., Yulong Jiang, Xinping Qu, Deduytsche, D., Detavernier, C.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Capacitors
Hafnium compounds
hbox{O}_{2} ambient annealing
interface passivation
Logic gates
Passivation
Plasmas
Substrates
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Zusammenfassung:Very promising capacitance-voltage (C-V) characteristics of capacitors on both p- and n-type Ge substrates are demonstrated by using an in situ O 2 plasma passivation and an O 2 ambient annealing. The capacitors exhibited a small equivalent oxide thickness of ~1.5 nm and a low D it (; 0.51 eV). The surface potential modulation efficiency was estimated to be ~80% from Hatband to strong inversion on both types of Ge. C-V hysteresis was less than 10 mV with positive bias up to 1.5 V. A low gate leakage current density of
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2166993