Fully Passivated AlInN/GaN HEMTs With f/f of 205/220 GHz

Fully Passivated AlInN/GaN HEMTs With f/f of 205/220 GHz

We report the fabrication and characterization of 30-nm-gate fully passivated AlInN/GaN high-electron mobility transistors (HEMTs) with cutoff frequencies f T and f MAX simultaneously exceeding 200 GHz at a given bias point. The current gain cutoff frequency does not vary significantly for 2.5

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2011-10, Vol.32 (10), p.1364-1366
Hauptverfasser: Tirelli, S., Marti, D., Haifeng Sun, Alt, A. R., Carlin, J.-F, Grandjean, N., Bolognesi, C. R.
Format: Artikel
Sprache:eng
Schlagworte:
AlInN/GaN
Current measurement
Gallium nitride
HEMTs
high-electron mobility transistor (HEMT)
Logic gates
MODFETs
Silicon compounds
surface depletion
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report the fabrication and characterization of 30-nm-gate fully passivated AlInN/GaN high-electron mobility transistors (HEMTs) with cutoff frequencies f T and f MAX simultaneously exceeding 200 GHz at a given bias point. The current gain cutoff frequency does not vary significantly for 2.5
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2162087