Interface-Dependent Spin-Reorientation Energy Barrier in Fe/MgO(001) Thin Film

Interface-Dependent Spin-Reorientation Energy Barrier in Fe/MgO(001) Thin Film

Using the density-functional-theory-based atomic modeling, the stable interface structure and the resultant magnetocrystalline anisotropy (MCA) of the Fe/MgO(001) for magnetic random access memory have been studied. The most stable surface structure of Fe/MgO(001) thin-film system was found to be ei...

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Veröffentlicht in:IEEE electron device letters 2011-09, Vol.32 (9), p.1287-1289
Hauptverfasser: Choi, Heechae, Lee, Eung-Kwan, Cho, Sung Beom, Yoo, Dong Su, Chung, Yong-Chae
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Atomic layer deposition
Atomic structure
Chemicals
Density functional theory
Devices
Electronics
Exact sciences and technology
Fe/MgO
Fermi surfaces
interface structure
Iron
Junctions
Magnetic and optical mass memories
Magnetic tunneling
Magnetization
Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics
perpendicular magnetic anisotropy
Random access memory
Resultants
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
Thin films
Tunneling magnetoresistance
Vacancies
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Zusammenfassung:Using the density-functional-theory-based atomic modeling, the stable interface structure and the resultant magnetocrystalline anisotropy (MCA) of the Fe/MgO(001) for magnetic random access memory have been studied. The most stable surface structure of Fe/MgO(001) thin-film system was found to be either defect free or possessing oxygen vacancies in a c(2 ×1) periodicity. The formation of the oxygen vacancies in c(2 ×1) periodicity on MgO(001) surface reduced the MCA of Fe layer from 1.38 to 0.31 meV/atom. The reduced MCA is originated from the filling of the minority states of the Fe orbital below Fermi level.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2160148