A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by KMC Simulation

A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by KMC Simulation

The forming stage characteristics of electrochemical-metallization resistive-switching-random-access-memory cells are studied with an improved kinetic Monte Carlo simulator. The filament topographies obtained at different forming voltage levels and the relationship between forming time and filament...

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Veröffentlicht in:IEEE electron device letters 2011-07, Vol.32 (7), p.949-951
Hauptverfasser: Feng Pan, Shong Yin, Subramanian, Vivek
Format: Artikel
Sprache:eng
Schlagworte:
Anodes
Applied sciences
Cathodes
Computer simulation
Copper
Design. Technologies. Operation analysis. Testing
Electric potential
Electrochemical
Electronics
Exact sciences and technology
filament
Filaments
Forming
forming stage
Integrated circuits
Integrated circuits by function (including memories and processors)
kinetic Monte Carlo (KMC)
Microelectronic fabrication (materials and surfaces technology)
Monte Carlo methods
resistive switching random access memory (RRAM)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silver
Surface topography
Surface treatment
Switches
Topography
Voltage
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Zusammenfassung:The forming stage characteristics of electrochemical-metallization resistive-switching-random-access-memory cells are studied with an improved kinetic Monte Carlo simulator. The filament topographies obtained at different forming voltage levels and the relationship between forming time and filament topographies are investigated in detail. The so-called "voltage-time dilemma" is simulated and studied. In addition, the various chemical and physical processes that produce these results are discussed. Finally, the simulated pattern is compared with experiments conducted on Cu/H 2 O and Ag/Ag 2 S systems.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2143691