Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM Devices

Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM Devices

Resistance random access memory devices based on nanoscale diamondlike carbon (DLC) films are demonstrated. The devices exhibit excellent memory performances such as high on/off-resistance ratio (>; 300), high switching speed (

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Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2011-06, Vol.32 (6), p.803-805
Hauptverfasser: Fu, Di, Xie, Dan, Feng, Tingting, Zhang, Chenhui, Niu, Jiebin, Qian, He, Liu, Litian
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Carbon
Design. Technologies. Operation analysis. Testing
Devices
Diamond-like carbon films
Diamondlike carbon (DLC)
Diamonds
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Materials
Nanocomposites
Nanomaterials
Nanoscale devices
Nanostructure
Nonvolatile memory
Recording and replay of audio and video signals
Resistance
resistance random access memory (RRAM)
Resistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
Switches
Switching
unipolar resistive switching
Voltage
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Beschreibung
Zusammenfassung:Resistance random access memory devices based on nanoscale diamondlike carbon (DLC) films are demonstrated. The devices exhibit excellent memory performances such as high on/off-resistance ratio (>; 300), high switching speed (
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2132750