Variability Analysis of TiN FinFET SRAM Cells and Its Compensation by Independent-DG FinFETs

The variability of the TiN FinFET SRAM cell performance is analyzed. It is experimentally demonstrated that the V th -controllable independent-double-gate (IDG) FinFET technology successfully improves the variation problems in SRAM performance. As a result, the IDG-FinFET technology enables 0.5-V SR...

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Veröffentlicht in:	IEEE electron device letters 2010-10, Vol.31 (10), p.1095-1097
Hauptverfasser:	Endo, Kazuhiko, O'uchi, Shin-ichi, Ishikawa, Yuki, Yongxun Liu, Matsukawa, Takashi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Compensation Condensed matter: electronic structure, electrical, magnetic, and optical properties Design. Technologies. Operation analysis. Testing Devices Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Exact sciences and technology FinFET FinFETs independent double gate (IDG) Integrated circuits Integrated circuits by function (including memories and processors) International Electron Devices Meeting Logic gates metal gate (MG) Noise Physics Random access memory Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SRAM Stability Static random access memory Surface double layers, schottky barriers, and work functions Tin Transistors variation work function (WF)
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Zusammenfassung:	The variability of the TiN FinFET SRAM cell performance is analyzed. It is experimentally demonstrated that the V th -controllable independent-double-gate (IDG) FinFET technology successfully improves the variation problems in SRAM performance. As a result, the IDG-FinFET technology enables 0.5-V SRAM operation with high cell stability.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2010.2062483