Improved Conversion Efficiency of Textured InGaN Solar Cells With Interdigitated Imbedded Electrodes

Textured n-GaN/i-InGaN/p-GaN solar cells with interdigitated imbedded electrodes (IIEs) eliminating the electrode-shading loss have been investigated. In the absence of the electrode-shading effect, the optimized textured solar cell exhibits a conversion efficiency of 1.03%, which is 78% and 47% hig...

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Veröffentlicht in:	IEEE electron device letters 2010-06, Vol.31 (6), p.585-587
Hauptverfasser:	Horng, Ray-Hua, Chu, Mu-Tao, Chen, Hung-Ruei, Liao, Wen-Yih, Wu, Ming-Hsien, Chen, Kuo-Feng, Wuu, Dong-Sing
Format:	Artikel
Sprache:	eng
Schlagworte:	Conversion Current density Devices Electrode shading Electrodes Gallium nitride Gallium nitrides hbox{n-GaN}/\hbox{i-InGaN}/\hbox{p-GaN} solar cell Indium Indium gallium nitrides interdigitated imbedded electrodes (IIEs) Mirrors Photovoltaic cells Semiconductor device measurement Silicon Silicon substrates Solar cells Substrates textured Wavelength measurement
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Zusammenfassung:	Textured n-GaN/i-InGaN/p-GaN solar cells with interdigitated imbedded electrodes (IIEs) eliminating the electrode-shading loss have been investigated. In the absence of the electrode-shading effect, the optimized textured solar cell exhibits a conversion efficiency of 1.03%, which is 78% and 47% higher than those of the conventional structure and the structure with mirror coated on silicon substrate with electrode shading, respectively. The short-circuit current density of this textured HE device is about 0.65 mA/cm 2 , which is 71% and 44% higher than those of the two compared structures, respectively.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2010.2046615