AC/DC Rectification With Indium Gallium Oxide Thin-Film Transistors
Two circuits to accomplish ac/dc rectification using thin-film transistors (TFTs) based on amorphous oxide semiconductors are presented. The TFTs are implemented using either indium gallium oxide or zinc tin oxide as the channel layer material. One circuit is a full-bridge configuration while the se...
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| Veröffentlicht in: | IEEE electron device letters 2010-04, Vol.31 (4), p.314-316 |
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| container_title | IEEE electron device letters |
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| creator | McFarlane, B.R. Kurahashi, P. Heineck, D.P. Presley, R.E. Sundholm, E. Wager, J.F. |
| description | Two circuits to accomplish ac/dc rectification using thin-film transistors (TFTs) based on amorphous oxide semiconductors are presented. The TFTs are implemented using either indium gallium oxide or zinc tin oxide as the channel layer material. One circuit is a full-bridge configuration while the second uses a cross-tied configuration to increase the output voltage. With an input of 7.07 V rms at a frequency of 1 MHz, output voltages of ~ 9 and ~ 10.5 V, respectively, are observed. With a channel length of 15 ¿m, successful operation up to 20 MHz is demonstrated. |
| doi_str_mv | 10.1109/LED.2010.2042424 |
| format | Article |
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The TFTs are implemented using either indium gallium oxide or zinc tin oxide as the channel layer material. One circuit is a full-bridge configuration while the second uses a cross-tied configuration to increase the output voltage. With an input of 7.07 V rms at a frequency of 1 MHz, output voltages of ~ 9 and ~ 10.5 V, respectively, are observed. With a channel length of 15 ¿m, successful operation up to 20 MHz is demonstrated.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2010.2042424</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amorphous materials ; Amorphous semiconductors ; Applied sciences ; Channels ; Circuits ; Electric potential ; Electronic equipment and fabrication. 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The TFTs are implemented using either indium gallium oxide or zinc tin oxide as the channel layer material. One circuit is a full-bridge configuration while the second uses a cross-tied configuration to increase the output voltage. With an input of 7.07 V rms at a frequency of 1 MHz, output voltages of ~ 9 and ~ 10.5 V, respectively, are observed. With a channel length of 15 ¿m, successful operation up to 20 MHz is demonstrated.</description><subject>Amorphous materials</subject><subject>Amorphous semiconductors</subject><subject>Applied sciences</subject><subject>Channels</subject><subject>Circuits</subject><subject>Electric potential</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium compounds</subject><subject>III-V semiconductor materials</subject><subject>Indium</subject><subject>rectifiers</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor materials</subject><subject>Semiconductors</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>thin-film transistors (TFTs)</subject><subject>Tin</subject><subject>Transistors</subject><subject>Voltage</subject><subject>Zinc</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kMtLw0AQhxdRsFbvgpeAiF7Szr6TY0kfFgoFqXgMm82GbsmjZhPQ_94NLR48yMIOw36_YfZD6B7DBGOIp5vFfELAdwQY8ecCjTDnUQhc0Es0AslwSDGIa3Tj3AEAMybZCCWzZDpPgjejO1tYrTrb1MGH7fbBus5tXwUrVZZD3X7Z3AS7va3DpS2rYNeq2lnXNa27RVeFKp25O9cxel8udslruNmu1slsE2oaiS7UMlOxyJmUmYgUy_ydA8mMAiOJFpnBGS-G7TUoI4XiOSexplRxFhEMjI7R82nusW0-e-O6tLJOm7JUtWl6l8ZEUEwIJZ58-ZfEFHPBYu4DY_T4Bz00fVv7f6QYiMScQTxQcKJ02zjXmiI9trZS7beH0sF_6v2ng__07N9Hns6DldOqLLwvbd1vjhBJYr-H5x5OnDXG_D5zRiRIQX8AF0GKtw</recordid><startdate>20100401</startdate><enddate>20100401</enddate><creator>McFarlane, B.R.</creator><creator>Kurahashi, P.</creator><creator>Heineck, D.P.</creator><creator>Presley, R.E.</creator><creator>Sundholm, E.</creator><creator>Wager, J.F.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Amorphous materials Amorphous semiconductors Applied sciences Channels Circuits Electric potential Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gallium compounds III-V semiconductor materials Indium rectifiers Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor materials Semiconductors Thin film transistors Thin films thin-film transistors (TFTs) Tin Transistors Voltage Zinc |
| title | AC/DC Rectification With Indium Gallium Oxide Thin-Film Transistors |
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