AC/DC Rectification With Indium Gallium Oxide Thin-Film Transistors

Two circuits to accomplish ac/dc rectification using thin-film transistors (TFTs) based on amorphous oxide semiconductors are presented. The TFTs are implemented using either indium gallium oxide or zinc tin oxide as the channel layer material. One circuit is a full-bridge configuration while the se...

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Veröffentlicht in:	IEEE electron device letters 2010-04, Vol.31 (4), p.314-316
Hauptverfasser:	McFarlane, B.R., Kurahashi, P., Heineck, D.P., Presley, R.E., Sundholm, E., Wager, J.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous materials Amorphous semiconductors Applied sciences Channels Circuits Electric potential Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gallium compounds III-V semiconductor materials Indium rectifiers Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor materials Semiconductors Thin film transistors Thin films thin-film transistors (TFTs) Tin Transistors Voltage Zinc
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Zusammenfassung:	Two circuits to accomplish ac/dc rectification using thin-film transistors (TFTs) based on amorphous oxide semiconductors are presented. The TFTs are implemented using either indium gallium oxide or zinc tin oxide as the channel layer material. One circuit is a full-bridge configuration while the second uses a cross-tied configuration to increase the output voltage. With an input of 7.07 V rms at a frequency of 1 MHz, output voltages of ~ 9 and ~ 10.5 V, respectively, are observed. With a channel length of 15 ¿m, successful operation up to 20 MHz is demonstrated.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2010.2042424