$Investigation on the Retention Reliability of Scaled \hbox/\hbox\hbox/\hbox Inter-Poly Dielectrics for nand Flash Cell Arrays$

Investigation on the Retention Reliability of Scaled \hbox/\hbox\hbox/\hbox Inter-Poly Dielectrics for nand Flash Cell Arrays

We investigate the retention reliability of a 51-nm-node 16-GB nand Flash cell transistor comprising SiO 2 /Al x O y /SiO 2 inter-poly dielectric (OAO IPD). Despite the fact that OAO IPD retains low trapping rate being beneficial to retention reliability, the trap sites are located on shallow energy...

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Veröffentlicht in:	IEEE electron device letters 2010-04, Vol.31 (4), p.266-268
Hauptverfasser:	Se Hoon Lee, Mincheol Park, Byung Yong Choi, Suk-Kang Sung, Tae Hun Kim, Byongsun Ju, Dong Chan Kim, Choong-Ho Lee, Keonsoo Kim, Jungdal Choi, Kinam Kim
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Atmospheric measurements Charge measurement Current measurement Dielectric measurements Electron traps High K dielectric materials High- k dielectric High-K gate dielectrics inter-poly dielectric (IPD) nand Flash memory retention reliability Temperature Tunneling
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