Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films

Thin-film HfO 2 is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56-200-Aring-thick HfO 2 films. A picosecond pump-probe thermoreflec...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2009-12, Vol.30 (12), p.1269-1271
Hauptverfasser:	Panzer, M.A., Shandalov, M., Rowlette, J.A., Oshima, Y., Yi Wei Chen, McIntyre, P.C., Goodson, K.E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Conductive films Dielectric films Dielectric materials Dielectric thin films Dielectrics Electronics Exact sciences and technology Gates Hafnium oxide Heat transfer Microstructure picosecond pump-probe thermometry Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature dependence Thermal conductivity thermal interface resistance Thermal properties Thermal resistance Thermoreflectance Thin film transistors Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Thin-film HfO 2 is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56-200-Aring-thick HfO 2 films. A picosecond pump-probe thermoreflectance technique yields room-temperature intrinsic thermal conductivity values between 0.49 and 0.95 W/(mmiddotK). The intrinsic thermal conductivity and interface resistance depend strongly on the film-thickness-dependent microstructure.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2009.2032937