Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change

A multilevel one-time programmable (OTP) oxide diode for cross-point memory is introduced. The oxide diode is composed of a thin-film p-CuO/n-InZnO x (IZO). By applying negative electrical pulses, the p-CuO/n-IZO diode exhibited multilevel resistance states, and such characteristics of the p-CuO/n-I...

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Veröffentlicht in:	IEEE electron device letters 2009-10, Vol.30 (10), p.1036-1038
Hauptverfasser:	Ki Hwan Kim, Bo Soo Kang, Myoung-Jae Lee, Seung-Eon Ahn, Chang Bum Lee, Stefanovich, G., Wen Xu Xianyu, Chang Jung Kim, Youngsoo Park
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences COPPER OXIDE Cross-point Crosstalk Devices diode DIODES Electric resistance Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ELECTRONIC PRODUCTS Electronics Exact sciences and technology Flash memory Fuses Light emitting diodes Material storage memory Migration Multilevel Nonhomogeneous media oxide OXIDES Resistors Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices THIN FILMS Transistors
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Zusammenfassung:	A multilevel one-time programmable (OTP) oxide diode for cross-point memory is introduced. The oxide diode is composed of a thin-film p-CuO/n-InZnO x (IZO). By applying negative electrical pulses, the p-CuO/n-IZO diode exhibited multilevel resistance states, and such characteristics of the p-CuO/n-IZO diode could be utilized as the cell of OTP cross-point memory. The resistance-change properties of the p-CuO/n-IZO diode originated possibly from a back-to-back diode phenomenon by oxygen ion migration in the IZO thin film.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2009.2029247