A CMOS-MEMS RF-Tunable Bandpass Filter Based on Two High- Q 22-MHz Polysilicon Clamped-Clamped Beam Resonators
This letter presents the design, fabrication, and demonstration of a CMOS-MEMS filter based on two high-Q submicrometer-scale clamped-clamped beam resonators with resonance frequency around 22 MHz. The MEMS resonators are fabricated with a 0.35-mum CMOS process and monolithically integrated with an...
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| Veröffentlicht in: | IEEE electron device letters 2009-07, Vol.30 (7), p.718-720 |
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| container_title | IEEE electron device letters |
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| creator | Lopez, J.L. Verd, J. Uranga, A. Giner, J. Murillo, G. Torres, F. Abadal, G. Barniol, N. |
| description | This letter presents the design, fabrication, and demonstration of a CMOS-MEMS filter based on two high-Q submicrometer-scale clamped-clamped beam resonators with resonance frequency around 22 MHz. The MEMS resonators are fabricated with a 0.35-mum CMOS process and monolithically integrated with an on-chip differential amplifier. The CMOS-MEMS resonator shows high-quality factors of 227 in air conditions and 4400 in a vacuum for a bias voltage of 5 V. In air conditions, the CMOS-MEMS parallel filter presents a programmable bandwidth from 100 to 200 kHz with a |
| doi_str_mv | 10.1109/LED.2009.2022509 |
| format | Article |
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The MEMS resonators are fabricated with a 0.35-mum CMOS process and monolithically integrated with an on-chip differential amplifier. The CMOS-MEMS resonator shows high-quality factors of 227 in air conditions and 4400 in a vacuum for a bias voltage of 5 V. In air conditions, the CMOS-MEMS parallel filter presents a programmable bandwidth from 100 to 200 kHz with a <1-dB ripple. In a vacuum, the filter presents a stop-band attenuation of 37 dB and a shape factor as low as 2.5 for a CMOS-compatible bias voltage of 5 V, demonstrating competitive performance compared with the state of the art of not fully integrated MEMS filters.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2009.2022509</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Band pass filters ; Bandpass filter ; Bandwidth ; Circuit properties ; CMOS process ; CMOS-MEMS ; Design. Technologies. Operation analysis. Testing ; Differential amplifiers ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Fabrication ; Frequency filters ; Integrated circuits ; Micro- and nanoelectromechanical devices (mems/nems) ; Micromechanical devices ; micromechanical filter ; Oscillators, resonators, synthetizers ; Resonance ; Resonant frequency ; Resonator filters ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; system-on-chip ; Voltage</subject><ispartof>IEEE electron device letters, 2009-07, Vol.30 (7), p.718-720</ispartof><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c371t-62bcb8a729f5bbfb63b7c0040be176bc578596d3ee573096ba4ea54ff6edef5e3</citedby><cites>FETCH-LOGICAL-c371t-62bcb8a729f5bbfb63b7c0040be176bc578596d3ee573096ba4ea54ff6edef5e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5109806$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5109806$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21829406$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lopez, J.L.</creatorcontrib><creatorcontrib>Verd, J.</creatorcontrib><creatorcontrib>Uranga, A.</creatorcontrib><creatorcontrib>Giner, J.</creatorcontrib><creatorcontrib>Murillo, G.</creatorcontrib><creatorcontrib>Torres, F.</creatorcontrib><creatorcontrib>Abadal, G.</creatorcontrib><creatorcontrib>Barniol, N.</creatorcontrib><title>A CMOS-MEMS RF-Tunable Bandpass Filter Based on Two High- Q 22-MHz Polysilicon Clamped-Clamped Beam Resonators</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>This letter presents the design, fabrication, and demonstration of a CMOS-MEMS filter based on two high-Q submicrometer-scale clamped-clamped beam resonators with resonance frequency around 22 MHz. The MEMS resonators are fabricated with a 0.35-mum CMOS process and monolithically integrated with an on-chip differential amplifier. The CMOS-MEMS resonator shows high-quality factors of 227 in air conditions and 4400 in a vacuum for a bias voltage of 5 V. In air conditions, the CMOS-MEMS parallel filter presents a programmable bandwidth from 100 to 200 kHz with a <1-dB ripple. In a vacuum, the filter presents a stop-band attenuation of 37 dB and a shape factor as low as 2.5 for a CMOS-compatible bias voltage of 5 V, demonstrating competitive performance compared with the state of the art of not fully integrated MEMS filters.</description><subject>Applied sciences</subject><subject>Band pass filters</subject><subject>Bandpass filter</subject><subject>Bandwidth</subject><subject>Circuit properties</subject><subject>CMOS process</subject><subject>CMOS-MEMS</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Differential amplifiers</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Frequency filters</subject><subject>Integrated circuits</subject><subject>Micro- and nanoelectromechanical devices (mems/nems)</subject><subject>Micromechanical devices</subject><subject>micromechanical filter</subject><subject>Oscillators, resonators, synthetizers</subject><subject>Resonance</subject><subject>Resonant frequency</subject><subject>Resonator filters</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>system-on-chip</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1LAzEQxYMoWKt3wUsuekudJJvs7lFra4UWv-p5SbKzupLu1k2L1L_elJZe5jG837yBR8glhwHnkN9ORw8DAZDHIYSC_Ij0uFIZA6XlMelBmnAmOehTchbCNwBPkjTpkeaODmfP72w2mr3TtzGbrxtjPdJ705RLEwId136FXdwDlrRt6Py3pZP684vRVyoEm03-6EvrN6H2tYv20JvFEku2V3qPZkHfMLSNWbVdOCcnlfEBL_baJx_j0Xw4YdPnx6fh3ZQ5mfIV08I6m5lU5JWytrJa2tQBJGCRp9o6lWYq16VEVKmEXFuToFFJVWkssVIo--Rml7vs2p81hlWxqIND702D7ToUUksh4qsIwg50XRtCh1Wx7OqF6TYFh2JbbBGLLbbFFvti48n1PtsEZ3zVmcbV4XAneCbyBHTkrnZcjYgHW8XMLLr_HzF_QA</recordid><startdate>20090701</startdate><enddate>20090701</enddate><creator>Lopez, J.L.</creator><creator>Verd, J.</creator><creator>Uranga, A.</creator><creator>Giner, J.</creator><creator>Murillo, G.</creator><creator>Torres, F.</creator><creator>Abadal, G.</creator><creator>Barniol, N.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20090701</creationdate><title>A CMOS-MEMS RF-Tunable Bandpass Filter Based on Two High- Q 22-MHz Polysilicon Clamped-Clamped Beam Resonators</title><author>Lopez, J.L. ; Verd, J. ; Uranga, A. ; Giner, J. ; Murillo, G. ; Torres, F. ; Abadal, G. ; Barniol, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c371t-62bcb8a729f5bbfb63b7c0040be176bc578596d3ee573096ba4ea54ff6edef5e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Band pass filters</topic><topic>Bandpass filter</topic><topic>Bandwidth</topic><topic>Circuit properties</topic><topic>CMOS process</topic><topic>CMOS-MEMS</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Differential amplifiers</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Frequency filters</topic><topic>Integrated circuits</topic><topic>Micro- and nanoelectromechanical devices (mems/nems)</topic><topic>Micromechanical devices</topic><topic>micromechanical filter</topic><topic>Oscillators, resonators, synthetizers</topic><topic>Resonance</topic><topic>Resonant frequency</topic><topic>Resonator filters</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>system-on-chip</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lopez, J.L.</creatorcontrib><creatorcontrib>Verd, J.</creatorcontrib><creatorcontrib>Uranga, A.</creatorcontrib><creatorcontrib>Giner, J.</creatorcontrib><creatorcontrib>Murillo, G.</creatorcontrib><creatorcontrib>Torres, F.</creatorcontrib><creatorcontrib>Abadal, G.</creatorcontrib><creatorcontrib>Barniol, N.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lopez, J.L.</au><au>Verd, J.</au><au>Uranga, A.</au><au>Giner, J.</au><au>Murillo, G.</au><au>Torres, F.</au><au>Abadal, G.</au><au>Barniol, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A CMOS-MEMS RF-Tunable Bandpass Filter Based on Two High- Q 22-MHz Polysilicon Clamped-Clamped Beam Resonators</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2009-07-01</date><risdate>2009</risdate><volume>30</volume><issue>7</issue><spage>718</spage><epage>720</epage><pages>718-720</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>This letter presents the design, fabrication, and demonstration of a CMOS-MEMS filter based on two high-Q submicrometer-scale clamped-clamped beam resonators with resonance frequency around 22 MHz. The MEMS resonators are fabricated with a 0.35-mum CMOS process and monolithically integrated with an on-chip differential amplifier. The CMOS-MEMS resonator shows high-quality factors of 227 in air conditions and 4400 in a vacuum for a bias voltage of 5 V. In air conditions, the CMOS-MEMS parallel filter presents a programmable bandwidth from 100 to 200 kHz with a <1-dB ripple. In a vacuum, the filter presents a stop-band attenuation of 37 dB and a shape factor as low as 2.5 for a CMOS-compatible bias voltage of 5 V, demonstrating competitive performance compared with the state of the art of not fully integrated MEMS filters.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2009.2022509</doi><tpages>3</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Band pass filters Bandpass filter Bandwidth Circuit properties CMOS process CMOS-MEMS Design. Technologies. Operation analysis. Testing Differential amplifiers Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Fabrication Frequency filters Integrated circuits Micro- and nanoelectromechanical devices (mems/nems) Micromechanical devices micromechanical filter Oscillators, resonators, synthetizers Resonance Resonant frequency Resonator filters Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices system-on-chip Voltage |
| title | A CMOS-MEMS RF-Tunable Bandpass Filter Based on Two High- Q 22-MHz Polysilicon Clamped-Clamped Beam Resonators |
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