A CMOS-MEMS RF-Tunable Bandpass Filter Based on Two High- Q 22-MHz Polysilicon Clamped-Clamped Beam Resonators

This letter presents the design, fabrication, and demonstration of a CMOS-MEMS filter based on two high-Q submicrometer-scale clamped-clamped beam resonators with resonance frequency around 22 MHz. The MEMS resonators are fabricated with a 0.35-mum CMOS process and monolithically integrated with an on-chip differential amplifier. The CMOS-MEMS resonator shows high-quality factors of 227 in air conditions and 4400 in a vacuum for a bias voltage of 5 V. In air conditions, the CMOS-MEMS parallel filter presents a programmable bandwidth from 100 to 200 kHz with a