RF Model of BEOL Vertical Natural Capacitor (VNCAP) Fabricated by 45-nm RF CMOS Technology and Its Verification

A radio-frequency equivalent circuit model for the symmetric vertical natural capacitor (VNCAP) in a 45 nm low-standby-power CMOS process is presented. The average effective capacitance density of 2.24 fF/ mum 2 is obtained from VNCAPs of 1 times (M1 - M5) + 2 times (M6 - M7) metal-layer configurati...

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Veröffentlicht in:	IEEE electron device letters 2009-05, Vol.30 (5), p.538-540
Hauptverfasser:	IN MAN KANG, JUNG, Seung-Jae, KIM, Young-Kwang, KIM, Han-Gu, CHOI, Kyu-Myung, CHOI, Tae-Hoon, JUNG, Jae-Hong, CHUNG, Chulho, KIM, Han-Su, PARK, Kangwook, OH, Hansu, LEE, Hyun-Woo, JO, Gwangdoo
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Capacitors CMOS CMOS process CMOS technology Costs Density Design. Technologies. Operation analysis. Testing Dielectric materials Dielectric, amorphous and glass solid devices Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Integrated circuits Mathematical models Microelectronic fabrication (materials and surfaces technology) MIM capacitors Networks On-wafer radio-frequency (RF) measurement Q factor Quality factor Radio frequencies Radio frequency Radiofrequency integrated circuits RF passive device model Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices vertical natural capacitor (VNCAP)
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Zusammenfassung:	A radio-frequency equivalent circuit model for the symmetric vertical natural capacitor (VNCAP) in a 45 nm low-standby-power CMOS process is presented. The average effective capacitance density of 2.24 fF/ mum 2 is obtained from VNCAPs of 1 times (M1 - M5) + 2 times (M6 - M7) metal-layer configuration after the open-short de-embedding procedure. The proposed model consists of main series capacitance network and lossy substrate network. The accuracy of the VNCAP model is verified S-parameters, effective capacitance C eff , and quality factor (Q) up to 15 GHz. The proposed model can accurately describe the frequency characteristics of S-parameters, C eff , and Q-factor up to 15 GHz for VNCAPs with different widths and lengths.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2009.2015781