P-Channel Tri-Gate FinFETs Featuring \hbox\hbox \hbox Source/Drain Contacts for Enhanced Drive Current Performance

We report the integration of nickel platinum germanosilicide (Ni 1-y Pt y SiGe) contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of Ni 1-y Pt y SiGe contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that Ni 1-y Pt y SiGe incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height (Phi P B ) among the candidates evaluated. The low Phi P B (0.309 eV) provides a 15% reduction in series resistance R series . With a superior morphological stability and reduced R series , FinFETs integrated with contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts.