Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/High- k Dielectric SOI FinFETs
In this letter, the effects of TiN-induced strain engineering on device characteristics for a metal gate/high-k silicon-on-insulator fin-shaped field-effect transistors were studied. From a convergent-beam electron-diffraction analysis and simulation study, a 3-nm TiN electrode was found to lead to...
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Veröffentlicht in: | IEEE electron device letters 2008-05, Vol.29 (5), p.487-490 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this letter, the effects of TiN-induced strain engineering on device characteristics for a metal gate/high-k silicon-on-insulator fin-shaped field-effect transistors were studied. From a convergent-beam electron-diffraction analysis and simulation study, a 3-nm TiN electrode was found to lead to significantly higher tensile stress on the Si substrate than a 20-nm TiN electrode. This high stress-induced fast bulk carrier generation results in the transient current-time characteristics. Therefore, 3- and 20-nm TiN electrodes are the excellent choice for nMOSFETs and pMOSFETs, respectively, which is from the standpoint of strain engineering, threshold voltage (V th ), and performance. Due to the metal-induced strain, I dsat improvements of 15% and 12% for nMOSFETs and pMOSFETs, respectively, were achieved. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2008.919782 |