RF Capacitance Extraction Utilizing a Series Resistance Deembedding Scheme for Ultraleaky MOS Devices

An accurate extraction method for series resistance and capacitance based on RF S -parameter measurement in ultraleaky MOS devices is presented in this paper. The method is proven by using a three-element equivalent circuit model for a capacitor and a well-known microwave theory. The proposed method...

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Veröffentlicht in:	IEEE electron device letters 2008-03, Vol.29 (3), p.238-241
Hauptverfasser:	CHOI, Gil-Bok, HONG, Seung-Ho, JUNG, Sung-Woo, KANG, Hee-Sung, JEONG, Yoon-Ha
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Capacitance extraction Capacitance measurement capacitance-voltage (C - V) Compound structure devices deembedding Dielectric measurements Dielectric, amorphous and glass solid devices Dielectrics Electrical resistance measurement Electronics Equivalent circuits Exact sciences and technology Extraction Frequency measurement gate leakage Mathematical models Microwave devices Microwave theory and techniques Microwaves MOS MOS capacitors MOS devices Radio frequencies Radio frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices series resistance Transistors ultrathin oxide
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Beschreibung
Zusammenfassung:	An accurate extraction method for series resistance and capacitance based on RF S -parameter measurement in ultraleaky MOS devices is presented in this paper. The method is proven by using a three-element equivalent circuit model for a capacitor and a well-known microwave theory. The proposed method improves the measurement accuracy and significantly reduces the frequency-dependence of capacitance. This method is demonstrated for a 1.5 nm SiO 2 dielectric NMOSFET.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2007.914080