A Graphene Field-Effect Device

In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the to...

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Veröffentlicht in:	IEEE electron device letters 2007-04, Vol.28 (4), p.282-284
Hauptverfasser:	Lemme, M.C., Echtermeyer, T.J., Baus, M., Kurz, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Atomic layer deposition Carbon nanotubes Carrier mobility CMOS technology Compound structure devices Deposition Design. Technologies. Operation analysis. Testing Devices Electronics Exact sciences and technology Field effect Graphene Integrated circuits Manufacturing Microelectronics mobility Monolayers MOSFET MOSFETs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon on insulator technology Substrates Technological innovation Thumb transistor Transistors
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Beschreibung
Zusammenfassung:	In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs
ISSN:	0741-3106 1558-0563 1558-0563
DOI:	10.1109/LED.2007.891668