A Study on the Pd/a-Si/Ni Seed Layer for Metal-Induced Lateral Crystallization and Poly-Si TFTs

A Study on the Pd/a-Si/Ni Seed Layer for Metal-Induced Lateral Crystallization and Poly-Si TFTs

The effect of Pd on the growth rate of metal-induced lateral crystallization (MILC) from Ni seed and the electrical properties of thin-film transistors (TFTs) fabricated on the films crystallized by MILC were investigated. When the Pd metal is placed on the amorphous-silicon/Ni-seed layer, the MILC...

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Veröffentlicht in:IEEE electron device letters 2006-11, Vol.27 (11), p.899-901
Hauptverfasser: SONG, Nam-Kyu, KIM, Min-Sun, PYO, Yu-Jin, JOO, Seung-Ki
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Applied sciences
Crystallization
Devices
Electrical properties
Electronics
Exact sciences and technology
Glass
Metal-induced lateral crystallization (MILC)
Microstructure
Microwave integrated circuits
Nickel
Palladium
poly-Si thin-film transistors (TFTs)
Seeds
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sputter etching
Sputtering
Substrates
Temperature
Thin film transistors
Transistors
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Zusammenfassung:The effect of Pd on the growth rate of metal-induced lateral crystallization (MILC) from Ni seed and the electrical properties of thin-film transistors (TFTs) fabricated on the films crystallized by MILC were investigated. When the Pd metal is placed on the amorphous-silicon/Ni-seed layer, the MILC growth rate is two to three times faster than that of conventional Ni-MILC, without any degradation of TFTs. These results were explained by a stress that is generated by the formation of Pd 2 Si
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.883559