Characterization of erbium-silicided Schottky diode junction
Trap density, lifetime, and the Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5/spl times/10/sup 13/ traps/cm/sup 2/, 3.75 ms and 0.76 eV, respec...
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| Veröffentlicht in: | IEEE electron device letters 2005-06, Vol.26 (6), p.354-356 |
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| container_end_page | 356 |
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| container_issue | 6 |
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| container_title | IEEE electron device letters |
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| creator | JANG, Moongyu KIM, Yarkyeon SHIN, Jaeheon LEE, Seongjae |
| description | Trap density, lifetime, and the Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5/spl times/10/sup 13/ traps/cm/sup 2/, 3.75 ms and 0.76 eV, respectively. By using the developed method, the interface of the Schottky diode can be evaluated quantitatively. |
| doi_str_mv | 10.1109/LED.2005.848074 |
| format | Article |
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The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5/spl times/10/sup 13/ traps/cm/sup 2/, 3.75 ms and 0.76 eV, respectively. By using the developed method, the interface of the Schottky diode can be evaluated quantitatively.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2005.848074</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Barriers ; Current measurement ; Density ; Devices ; Diodes ; Electron traps ; Electronics ; Equivalent circuit ; Equivalent circuits ; erbium-silicide ; Exact sciences and technology ; MOSFETs ; Schottky barriers ; Schottky diode ; Schottky diodes ; Semiconductor diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicides ; Silicon ; Temperature ; trap</subject><ispartof>IEEE electron device letters, 2005-06, Vol.26 (6), p.354-356</ispartof><rights>2005 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c447t-abbf75a1feee12d3e8d70327eae6eba913f27ce4dff4de97b2b45de7516724453</citedby><cites>FETCH-LOGICAL-c447t-abbf75a1feee12d3e8d70327eae6eba913f27ce4dff4de97b2b45de7516724453</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1432897$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1432897$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16875794$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>JANG, Moongyu</creatorcontrib><creatorcontrib>KIM, Yarkyeon</creatorcontrib><creatorcontrib>SHIN, Jaeheon</creatorcontrib><creatorcontrib>LEE, Seongjae</creatorcontrib><title>Characterization of erbium-silicided Schottky diode junction</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Trap density, lifetime, and the Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5/spl times/10/sup 13/ traps/cm/sup 2/, 3.75 ms and 0.76 eV, respectively. By using the developed method, the interface of the Schottky diode can be evaluated quantitatively.</description><subject>Applied sciences</subject><subject>Barriers</subject><subject>Current measurement</subject><subject>Density</subject><subject>Devices</subject><subject>Diodes</subject><subject>Electron traps</subject><subject>Electronics</subject><subject>Equivalent circuit</subject><subject>Equivalent circuits</subject><subject>erbium-silicide</subject><subject>Exact sciences and technology</subject><subject>MOSFETs</subject><subject>Schottky barriers</subject><subject>Schottky diode</subject><subject>Schottky diodes</subject><subject>Semiconductor diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicides</subject><subject>Silicon</subject><subject>Temperature</subject><subject>trap</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90D1LBDEQBuAgCp6ntYXNIqjV3iXZZJOAjZyfcGCh1iGbTDDn3q4mu4X-enOcIFhYBSbPzDAvQscEzwjBar68uZ5RjPlMMokF20ETwrksMa-rXTTJFVJWBNf76CClFcaEMcEm6HLxaqKxA8TwZYbQd0XvC4hNGNdlCm2wwYErnuxrPwxvn4ULvYNiNXZ2Yw_RnjdtgqOfd4pebm-eF_fl8vHuYXG1LG1eMpSmabzghngAINRVIJ3AFRVgoIbGKFJ5Kiww5z1zoERDG8YdCE5qQRnj1RRdbOe-x_5jhDTodUgW2tZ00I9JK0xqSZmUWZ7_K6lQWTGV4ekfuOrH2OUrtCIUCyopyWi-RTb2KUXw-j2GtYmfmmC9CV3n0PUmdL0NPXec_Yw1yZrWR9PZkH7baim4UBt3snUhZ_L7zSoqlai-ASrziiA</recordid><startdate>20050601</startdate><enddate>20050601</enddate><creator>JANG, Moongyu</creator><creator>KIM, Yarkyeon</creator><creator>SHIN, Jaeheon</creator><creator>LEE, Seongjae</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20050601</creationdate><title>Characterization of erbium-silicided Schottky diode junction</title><author>JANG, Moongyu ; KIM, Yarkyeon ; SHIN, Jaeheon ; LEE, Seongjae</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c447t-abbf75a1feee12d3e8d70327eae6eba913f27ce4dff4de97b2b45de7516724453</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Barriers</topic><topic>Current measurement</topic><topic>Density</topic><topic>Devices</topic><topic>Diodes</topic><topic>Electron traps</topic><topic>Electronics</topic><topic>Equivalent circuit</topic><topic>Equivalent circuits</topic><topic>erbium-silicide</topic><topic>Exact sciences and technology</topic><topic>MOSFETs</topic><topic>Schottky barriers</topic><topic>Schottky diode</topic><topic>Schottky diodes</topic><topic>Semiconductor diodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicides</topic><topic>Silicon</topic><topic>Temperature</topic><topic>trap</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>JANG, Moongyu</creatorcontrib><creatorcontrib>KIM, Yarkyeon</creatorcontrib><creatorcontrib>SHIN, Jaeheon</creatorcontrib><creatorcontrib>LEE, Seongjae</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JANG, Moongyu</au><au>KIM, Yarkyeon</au><au>SHIN, Jaeheon</au><au>LEE, Seongjae</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of erbium-silicided Schottky diode junction</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2005-06-01</date><risdate>2005</risdate><volume>26</volume><issue>6</issue><spage>354</spage><epage>356</epage><pages>354-356</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Trap density, lifetime, and the Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5/spl times/10/sup 13/ traps/cm/sup 2/, 3.75 ms and 0.76 eV, respectively. By using the developed method, the interface of the Schottky diode can be evaluated quantitatively.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2005.848074</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 2005-06, Vol.26 (6), p.354-356 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Barriers Current measurement Density Devices Diodes Electron traps Electronics Equivalent circuit Equivalent circuits erbium-silicide Exact sciences and technology MOSFETs Schottky barriers Schottky diode Schottky diodes Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicides Silicon Temperature trap |
| title | Characterization of erbium-silicided Schottky diode junction |
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