Characterization of erbium-silicided Schottky diode junction

Trap density, lifetime, and the Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5/spl times/10/sup 13/ traps/cm/sup 2/, 3.75 ms and 0.76 eV, respec...

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Veröffentlicht in:	IEEE electron device letters 2005-06, Vol.26 (6), p.354-356
Hauptverfasser:	JANG, Moongyu, KIM, Yarkyeon, SHIN, Jaeheon, LEE, Seongjae
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Barriers Current measurement Density Devices Diodes Electron traps Electronics Equivalent circuit Equivalent circuits erbium-silicide Exact sciences and technology MOSFETs Schottky barriers Schottky diode Schottky diodes Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicides Silicon Temperature trap
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Beschreibung
Zusammenfassung:	Trap density, lifetime, and the Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5/spl times/10/sup 13/ traps/cm/sup 2/, 3.75 ms and 0.76 eV, respectively. By using the developed method, the interface of the Schottky diode can be evaluated quantitatively.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2005.848074