Laterally scaled Si-Si/sub 0.7/Ge/sub 0.3/ n-MODFETs with f/sub max/>200 GHz and low operating bias

Laterally scaled Si-Si/sub 0.7/Ge/sub 0.3/ n-MODFETs with f/sub max/>200 GHz and low operating bias

We report on the dc and RF characterization of laterally scaled, Si-SiGe n-MODFETs. Devices with gate length, L/sub g/, of 80 nm had f/sub T/=79 GHz and f/sub max/=212 GHz, while devices with L/sub g/=70 nm had f/sub T/ as high as 92 GHz. The MODFETs displayed enhanced f/sub T/ at reduced drain-to-s...

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Veröffentlicht in:IEEE electron device letters 2005-03, Vol.26 (3), p.178-180
Hauptverfasser: Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Jenkins, K.A., Canaperi, D.F., Tornello, J.A., Jahnes, C.V., Steen, S.E.
Format: Artikel
Sprache:eng
Schlagworte:
Fabrication
Germanium silicon alloys
HEMTs
High mobility
Implants
MODFET
MODFET circuits
MOSFETs
Radio frequency
Resists
Silicon germanium
Tin
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Beschreibung
Zusammenfassung:We report on the dc and RF characterization of laterally scaled, Si-SiGe n-MODFETs. Devices with gate length, L/sub g/, of 80 nm had f/sub T/=79 GHz and f/sub max/=212 GHz, while devices with L/sub g/=70 nm had f/sub T/ as high as 92 GHz. The MODFETs displayed enhanced f/sub T/ at reduced drain-to-source voltage, V/sub ds/, compared to Si MOSFETs with similar f/sub T/ at high V/sub ds/.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.843222