A novel fully CMOS process compatible PREM for SOC applications

A novel fully CMOS process compatible PREM for SOC applications

A novel nonvolatile memory cell named programmable resistor with eraseless memory (PREM) is proposed for system on chip applications for the first time. PREM combines a novel "eraseless" algorithm and the progressive breakdown of an ultrathin oxide. No or one extra mask is needed with a st...

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Veröffentlicht in:IEEE electron device letters 2005-03, Vol.26 (3), p.203-204
Hauptverfasser: Yeh, C.C., Tahui Wang, Tsai, W.J., Lu, T.C., Liao, Y.Y., Zous, N.K., Chin, C.Y., Chen, Y.R., Chen, M.S., WenChi Ting, Chih-Yuan Lu
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Breakdown
Breakdown voltage
CMOS
CMOS process
Design. Technologies. Operation analysis. Testing
Diodes
Electric breakdown
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Eraseless
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Leakage current
Magnetic and optical mass memories
Multilevel
multilevel cell (MLC)
multitime programming (MTP)
nonvolatile
Nonvolatile memory
Oxides
programmable resistor with eraseless memory (PREM)
Programming
progressive breakdown
Resistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
Stress control
System on chip
system on chip (SOC)
System-on-a-chip
Voltage control
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Beschreibung
Zusammenfassung:A novel nonvolatile memory cell named programmable resistor with eraseless memory (PREM) is proposed for system on chip applications for the first time. PREM combines a novel "eraseless" algorithm and the progressive breakdown of an ultrathin oxide. No or one extra mask is needed with a standard CMOS process. Multitime programming, multilevel cell, nonvolatility, and low-voltage operation are realized. Good reliability is demonstrated based on the result of a single cell.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.843221