Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM

Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM

A field-programmable, stackable memory cell using 0.15-μm technology is demonstrated. Vertical polycrystalline silicon diodes are stacked on top of one another, with tungsten (with TiN adhesion film) interconnect wires. An SiO 2 antifuse film separates the top of each diode from the TiN-W films. The...

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Veröffentlicht in:IEEE electron device letters 2004-05, Vol.25 (5), p.271-273
Hauptverfasser: Herner, S.B., Bandyopadhyay, A., Dunton, S.V., Eckert, V., Gu, J., Hsia, K.J., Hu, S., Jahn, C., Kidwell, D., Konevecki, M., Mahajani, M., Park, K., Petti, C., Radigan, S.R., Raghuram, U., Vienna, J., Vyvoda, M.A.
Format: Artikel
Sprache:eng
Schlagworte:
Adhesion
Adhesives
Antifuses
Diodes
Electric potential
P-i-n diodes
PIN photodiodes
Read only memory
Semiconductor films
Silicon
Silicon diodes
Tin
Tungsten
Voltage
Wire
Wires
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Beschreibung
Zusammenfassung:A field-programmable, stackable memory cell using 0.15-μm technology is demonstrated. Vertical polycrystalline silicon diodes are stacked on top of one another, with tungsten (with TiN adhesion film) interconnect wires. An SiO 2 antifuse film separates the top of each diode from the TiN-W films. The cell is programmed when sufficient biasing voltage is applied to break down the antifuse, connecting the diode to tungsten. The cell is unprogrammed when the antifuse is intact. Cell fabrication and performance are described.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.827287