Charge transport mechanism in metal-nitride-oxide-silicon structures

Charge transport mechanism in metal-nitride-oxide-silicon structures

A charge transport mechanism in double oxide-nitride dielectric was studied experimentally and theoretically. We have found that widely accepted Frenkel effect or thermally assisted tunneling could not explain experimental current-field-temperature dependences. For the first time we demonstrate that...

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Veröffentlicht in:IEEE electron device letters 2002-06, Vol.23 (6), p.336-338
Hauptverfasser: Nasyrov, K.A., Gritsenko, V.A., Kim, M.K., Chae, H.S., Chae, S.D., Ryu, W.I., Sok, J.H., Lee, J.-W., Kim, B.M.
Format: Artikel
Sprache:eng
Schlagworte:
Charge carrier processes
Charge transport
Devices
Dielectrics
Electrodes
Electron traps
EPROM
Ionization
Leakage current
Metal-nitride-oxide-silicon
Random access memory
Silicon
Silicon nitride
Tunneling
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Beschreibung
Zusammenfassung:A charge transport mechanism in double oxide-nitride dielectric was studied experimentally and theoretically. We have found that widely accepted Frenkel effect or thermally assisted tunneling could not explain experimental current-field-temperature dependences. For the first time we demonstrate that ionization mechanism of deep traps, which control charge transport in silicon nitride, is due to multiphonon process.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2002.1004227