Design of Mid-Infrared Ge 1-x Sn x /Ge Heterojunction Photodetectors on GeSnOI Platform With a Bandwidth Exceeding 100 GHz

Design of Mid-Infrared Ge 1-x Sn x /Ge Heterojunction Photodetectors on GeSnOI Platform With a Bandwidth Exceeding 100 GHz

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2025-01, Vol.31 (1: SiGeSn Infrared Photon.), p.1-8
Hauptverfasser: Kumar, Harshvardhan, Oehme, Michael
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title Design of Mid-Infrared Ge 1-x Sn x /Ge Heterojunction Photodetectors on GeSnOI Platform With a Bandwidth Exceeding 100 GHz
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