Fast Relaxation of Photo-Excited Carriers in 2-D Transition Metal Dichalcogenides
We predict a fast relaxation of photo-excited carriers in monolayer transition metal dichalcogenides, which is mediated by the emission of longitudinal optical (LO) and homopolar (HP) phonons. By evaluating Born effective charges for MoS 2 , MoSe 2 , WS 2 , and WSe 2 , we find that, due to the polar...
Gespeichert in:
Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2017-01, Vol.23 (1), p.168-172 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 172 |
---|---|
container_issue | 1 |
container_start_page | 168 |
container_title | IEEE journal of selected topics in quantum electronics |
container_volume | 23 |
creator | Danovich, Mark Aleiner, Igor L. Drummond, Neil D. Fal'ko, Vladimir I. |
description | We predict a fast relaxation of photo-excited carriers in monolayer transition metal dichalcogenides, which is mediated by the emission of longitudinal optical (LO) and homopolar (HP) phonons. By evaluating Born effective charges for MoS 2 , MoSe 2 , WS 2 , and WSe 2 , we find that, due to the polar coupling of electrons with LO phonons, and the HP phonons lattice deformation potential, the cooling times for hot electrons and holes from excitation energies of several hundred meV are at ps-scale. |
doi_str_mv | 10.1109/JSTQE.2016.2583059 |
format | Article |
fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_JSTQE_2016_2583059</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7496798</ieee_id><sourcerecordid>4223583031</sourcerecordid><originalsourceid>FETCH-LOGICAL-c388t-5f4f5f7f5dfb0f767793b02753f7b04f63567eb36a150998f77e44002728b0e93</originalsourceid><addsrcrecordid>eNo9kMlOwzAQQCMEEqXwA3CxxDll4t1H1IVFRVAoEjfLSW3qKsRgp1L5e9JFnGYO781IL8suCxgUBaibx7f5bDzAUPABZpIAU0dZr2BM5pRRfNztIESOOXycZmcprQBAUgm9bDYxqUWvtjYb0_rQoODQyzK0IR9vKt_aBRqaGL2NCfkG4XyE5tE0ye_YJ9uaGo18tTR1FT5t4xc2nWcnztTJXhxmP3ufjOfD-3z6fPcwvJ3mFZGyzZmjjjnh2MKV4AQXQpESsGDEiRKo44RxYUvCTcFAKemEsJRCR2BZglWkn13v737H8LO2qdWrsI5N91IXXQFFOFW4o_CeqmJIKVqnv6P_MvFXF6C36fQund6m04d0nXS1l7y19l8QVHGhJPkDax9pFA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1830936492</pqid></control><display><type>article</type><title>Fast Relaxation of Photo-Excited Carriers in 2-D Transition Metal Dichalcogenides</title><source>IEEE Electronic Library (IEL)</source><creator>Danovich, Mark ; Aleiner, Igor L. ; Drummond, Neil D. ; Fal'ko, Vladimir I.</creator><creatorcontrib>Danovich, Mark ; Aleiner, Igor L. ; Drummond, Neil D. ; Fal'ko, Vladimir I.</creatorcontrib><description>We predict a fast relaxation of photo-excited carriers in monolayer transition metal dichalcogenides, which is mediated by the emission of longitudinal optical (LO) and homopolar (HP) phonons. By evaluating Born effective charges for MoS 2 , MoSe 2 , WS 2 , and WSe 2 , we find that, due to the polar coupling of electrons with LO phonons, and the HP phonons lattice deformation potential, the cooling times for hot electrons and holes from excitation energies of several hundred meV are at ps-scale.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2016.2583059</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Charge carrier processes ; Couplings ; Optical coupling ; Optical scattering ; optoelectronics ; Phonons ; Stimulated emission ; TMDCs ; ultrafast relaxation</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2017-01, Vol.23 (1), p.168-172</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c388t-5f4f5f7f5dfb0f767793b02753f7b04f63567eb36a150998f77e44002728b0e93</citedby><cites>FETCH-LOGICAL-c388t-5f4f5f7f5dfb0f767793b02753f7b04f63567eb36a150998f77e44002728b0e93</cites><orcidid>0000-0003-0851-5829</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7496798$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7496798$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Danovich, Mark</creatorcontrib><creatorcontrib>Aleiner, Igor L.</creatorcontrib><creatorcontrib>Drummond, Neil D.</creatorcontrib><creatorcontrib>Fal'ko, Vladimir I.</creatorcontrib><title>Fast Relaxation of Photo-Excited Carriers in 2-D Transition Metal Dichalcogenides</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>We predict a fast relaxation of photo-excited carriers in monolayer transition metal dichalcogenides, which is mediated by the emission of longitudinal optical (LO) and homopolar (HP) phonons. By evaluating Born effective charges for MoS 2 , MoSe 2 , WS 2 , and WSe 2 , we find that, due to the polar coupling of electrons with LO phonons, and the HP phonons lattice deformation potential, the cooling times for hot electrons and holes from excitation energies of several hundred meV are at ps-scale.</description><subject>Charge carrier processes</subject><subject>Couplings</subject><subject>Optical coupling</subject><subject>Optical scattering</subject><subject>optoelectronics</subject><subject>Phonons</subject><subject>Stimulated emission</subject><subject>TMDCs</subject><subject>ultrafast relaxation</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMlOwzAQQCMEEqXwA3CxxDll4t1H1IVFRVAoEjfLSW3qKsRgp1L5e9JFnGYO781IL8suCxgUBaibx7f5bDzAUPABZpIAU0dZr2BM5pRRfNztIESOOXycZmcprQBAUgm9bDYxqUWvtjYb0_rQoODQyzK0IR9vKt_aBRqaGL2NCfkG4XyE5tE0ye_YJ9uaGo18tTR1FT5t4xc2nWcnztTJXhxmP3ufjOfD-3z6fPcwvJ3mFZGyzZmjjjnh2MKV4AQXQpESsGDEiRKo44RxYUvCTcFAKemEsJRCR2BZglWkn13v737H8LO2qdWrsI5N91IXXQFFOFW4o_CeqmJIKVqnv6P_MvFXF6C36fQund6m04d0nXS1l7y19l8QVHGhJPkDax9pFA</recordid><startdate>201701</startdate><enddate>201701</enddate><creator>Danovich, Mark</creator><creator>Aleiner, Igor L.</creator><creator>Drummond, Neil D.</creator><creator>Fal'ko, Vladimir I.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-0851-5829</orcidid></search><sort><creationdate>201701</creationdate><title>Fast Relaxation of Photo-Excited Carriers in 2-D Transition Metal Dichalcogenides</title><author>Danovich, Mark ; Aleiner, Igor L. ; Drummond, Neil D. ; Fal'ko, Vladimir I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c388t-5f4f5f7f5dfb0f767793b02753f7b04f63567eb36a150998f77e44002728b0e93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Charge carrier processes</topic><topic>Couplings</topic><topic>Optical coupling</topic><topic>Optical scattering</topic><topic>optoelectronics</topic><topic>Phonons</topic><topic>Stimulated emission</topic><topic>TMDCs</topic><topic>ultrafast relaxation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Danovich, Mark</creatorcontrib><creatorcontrib>Aleiner, Igor L.</creatorcontrib><creatorcontrib>Drummond, Neil D.</creatorcontrib><creatorcontrib>Fal'ko, Vladimir I.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of selected topics in quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Danovich, Mark</au><au>Aleiner, Igor L.</au><au>Drummond, Neil D.</au><au>Fal'ko, Vladimir I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fast Relaxation of Photo-Excited Carriers in 2-D Transition Metal Dichalcogenides</atitle><jtitle>IEEE journal of selected topics in quantum electronics</jtitle><stitle>JSTQE</stitle><date>2017-01</date><risdate>2017</risdate><volume>23</volume><issue>1</issue><spage>168</spage><epage>172</epage><pages>168-172</pages><issn>1077-260X</issn><eissn>1558-4542</eissn><coden>IJSQEN</coden><abstract>We predict a fast relaxation of photo-excited carriers in monolayer transition metal dichalcogenides, which is mediated by the emission of longitudinal optical (LO) and homopolar (HP) phonons. By evaluating Born effective charges for MoS 2 , MoSe 2 , WS 2 , and WSe 2 , we find that, due to the polar coupling of electrons with LO phonons, and the HP phonons lattice deformation potential, the cooling times for hot electrons and holes from excitation energies of several hundred meV are at ps-scale.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSTQE.2016.2583059</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-0851-5829</orcidid><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISSN: 1077-260X |
ispartof | IEEE journal of selected topics in quantum electronics, 2017-01, Vol.23 (1), p.168-172 |
issn | 1077-260X 1558-4542 |
language | eng |
recordid | cdi_crossref_primary_10_1109_JSTQE_2016_2583059 |
source | IEEE Electronic Library (IEL) |
subjects | Charge carrier processes Couplings Optical coupling Optical scattering optoelectronics Phonons Stimulated emission TMDCs ultrafast relaxation |
title | Fast Relaxation of Photo-Excited Carriers in 2-D Transition Metal Dichalcogenides |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T11%3A16%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fast%20Relaxation%20of%20Photo-Excited%20Carriers%20in%202-D%20Transition%20Metal%20Dichalcogenides&rft.jtitle=IEEE%20journal%20of%20selected%20topics%20in%20quantum%20electronics&rft.au=Danovich,%20Mark&rft.date=2017-01&rft.volume=23&rft.issue=1&rft.spage=168&rft.epage=172&rft.pages=168-172&rft.issn=1077-260X&rft.eissn=1558-4542&rft.coden=IJSQEN&rft_id=info:doi/10.1109/JSTQE.2016.2583059&rft_dat=%3Cproquest_RIE%3E4223583031%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1830936492&rft_id=info:pmid/&rft_ieee_id=7496798&rfr_iscdi=true |