Fast Relaxation of Photo-Excited Carriers in 2-D Transition Metal Dichalcogenides

We predict a fast relaxation of photo-excited carriers in monolayer transition metal dichalcogenides, which is mediated by the emission of longitudinal optical (LO) and homopolar (HP) phonons. By evaluating Born effective charges for MoS 2 , MoSe 2 , WS 2 , and WSe 2 , we find that, due to the polar...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2017-01, Vol.23 (1), p.168-172
Hauptverfasser: Danovich, Mark, Aleiner, Igor L., Drummond, Neil D., Fal'ko, Vladimir I.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We predict a fast relaxation of photo-excited carriers in monolayer transition metal dichalcogenides, which is mediated by the emission of longitudinal optical (LO) and homopolar (HP) phonons. By evaluating Born effective charges for MoS 2 , MoSe 2 , WS 2 , and WSe 2 , we find that, due to the polar coupling of electrons with LO phonons, and the HP phonons lattice deformation potential, the cooling times for hot electrons and holes from excitation energies of several hundred meV are at ps-scale.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2016.2583059