Wafer Level High-Speed Germanium Photodiode Array Integration

Wafer Level High-Speed Germanium Photodiode Array Integration

High-density germanium photodiode arrays are integrated on top of a dummy CMOS 200-mm Silicon wafer. Using a conventional available semiconductor fabrication line, the target specifications are reached with a yield exceeding 99% for several thousands of tested photodiodes with respect to bandwidth,...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2011-05, Vol.17 (3), p.526-530
Hauptverfasser: Kopp, Christophe, Ferron, Alexandre, Hartmann, Jean-Michel, Fournier, Maryse, Augendre, Emmanuel, Grosse, Philippe, Fedeli, Jean-Marc, Derks, Henk
Format: Artikel
Sprache:eng
Schlagworte:
Arrays
Bandwidth
CMOS integrated circuits
Dark current
Density
Germanium
Germanium compounds
High speed
hybrid integrated circuit packaging
photodetectors
Photodiodes
Photonics
Semiconductors
Silicon
silicon on insulator technology
Wafers
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Beschreibung
Zusammenfassung:High-density germanium photodiode arrays are integrated on top of a dummy CMOS 200-mm Silicon wafer. Using a conventional available semiconductor fabrication line, the target specifications are reached with a yield exceeding 99% for several thousands of tested photodiodes with respect to bandwidth, responsivity, and dark current. A very low dark current density in the range of 7 mA/cm 2 is obtained. A median bandwidth above 9 GHz is reached with a large 30-μm diameter photodiode.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2011.2108639