A 224-Gb/s DAC-Based PAM-4 Quarter-Rate Transmitter With 8-Tap FFE in 10-nm FinFET

This article presents analysis, design details, and measurement result of a 224-Gb/s four-level pulse amplitude modulation (PAM-4) transmitter (TX) consisting of a 7-bit voltage digital-to-analog converter (DAC) driver, digital 8-tap feed-forward equalizer (FFE), and a 28-GHz inductively peaked cloc...

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Veröffentlicht in:IEEE journal of solid-state circuits 2022-01, Vol.57 (1), p.6-20
Hauptverfasser: Kim, Jihwan, Kundu, Sandipan, Balankutty, Ajay, Beach, Matthew, Kim, Bong Chan, Kim, Stephen T., Liu, Yutao, Murthy, Savyasaachi Keshava, Wali, Priya, Yu, Kai, Kim, Hyung Seok, Liu, Chuan-Chang, Shin, Dongseok, Cohen, Ariel, Segal, Yoav, Fan, Yongping, Li, Peng, O'Mahony, Frank
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container_issue 1
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container_title IEEE journal of solid-state circuits
container_volume 57
creator Kim, Jihwan
Kundu, Sandipan
Balankutty, Ajay
Beach, Matthew
Kim, Bong Chan
Kim, Stephen T.
Liu, Yutao
Murthy, Savyasaachi Keshava
Wali, Priya
Yu, Kai
Kim, Hyung Seok
Liu, Chuan-Chang
Shin, Dongseok
Cohen, Ariel
Segal, Yoav
Fan, Yongping
Li, Peng
O'Mahony, Frank
description This article presents analysis, design details, and measurement result of a 224-Gb/s four-level pulse amplitude modulation (PAM-4) transmitter (TX) consisting of a 7-bit voltage digital-to-analog converter (DAC) driver, digital 8-tap feed-forward equalizer (FFE), and a 28-GHz inductively peaked clock distribution network. The TX DAC uses quarter-rate clocking with a 4:1 pulse-based data serialization architecture. Design techniques for generating and distributing low-jitter CMOS clocks up to 29 GHz, timing closure in the serializer, 112-Gbaud 4:1 data MUX using 1-UI pulse generator, and bandwidth/return loss/group delay optimized output pad network using a 9th-order LC filter are described. Fabricated in the Intel 10-nm FinFET process technology, the TX demonstrates random jitter (RJ) of 65 fs rms with nominal output swing of 1.0~V_{\mathrm {ppd}} at 224 Gb/s achieving 1.88-pJ/b energy efficiency including an on-die LC phase-locked loop (PLL). To the best of authors' knowledge, this TX achieved the highest data rate with the lowest RJ for CMOS SerDes TXs reported to date.
doi_str_mv 10.1109/JSSC.2021.3108969
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The TX DAC uses quarter-rate clocking with a 4:1 pulse-based data serialization architecture. Design techniques for generating and distributing low-jitter CMOS clocks up to 29 GHz, timing closure in the serializer, 112-Gbaud 4:1 data MUX using 1-UI pulse generator, and bandwidth/return loss/group delay optimized output pad network using a 9th-order LC filter are described. Fabricated in the Intel 10-nm FinFET process technology, the TX demonstrates random jitter (RJ) of 65 fs rms with nominal output swing of &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;1.0~V_{\mathrm {ppd}} &lt;/tex-math&gt;&lt;/inline-formula&gt; at 224 Gb/s achieving 1.88-pJ/b energy efficiency including an on-die LC phase-locked loop (PLL). To the best of authors' knowledge, this TX achieved the highest data rate with the lowest RJ for CMOS SerDes TXs reported to date.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSSC.2021.3108969</doi><tpages>15</tpages><orcidid>https://orcid.org/0000-0003-0014-2626</orcidid><orcidid>https://orcid.org/0000-0002-5599-2997</orcidid><orcidid>https://orcid.org/0000-0001-7961-9452</orcidid><orcidid>https://orcid.org/0000-0003-2386-7945</orcidid><orcidid>https://orcid.org/0000-0002-1996-9319</orcidid><orcidid>https://orcid.org/0000-0001-5914-2765</orcidid><orcidid>https://orcid.org/0000-0003-3806-6913</orcidid></addata></record>
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subjects 10 nm
4:1 serializer
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Bandwidth
Clocks
CMOS
Digital to analog converters
digital-to-analog converter (DAC)
Equalizers
feed-forward equalizer (FFE)
FinFET
four-level pulse amplitude modulation (PAM-4)
Group delay
I/O
Jitter
Linearity
matching network
Phase locked loops
Pulse amplitude modulation
Pulse generators
quarter rate
SerDes
Timing
transmitter (TX)
Transmitters
Vibration
title A 224-Gb/s DAC-Based PAM-4 Quarter-Rate Transmitter With 8-Tap FFE in 10-nm FinFET
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