100 GHz+ Gain-Bandwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOS

Differential amplifiers incorporating the advantages of both Si and III-V technologies have been fabricated in a wafer scale, heterogeneously integrated, process using both 250 nm InP DHBTs and 130 nm CMOS. These ICs demonstrated gain-bandwidth product of 40-130 GHz and low frequency gain > 45 dB...

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Veröffentlicht in:IEEE journal of solid-state circuits 2009-10, Vol.44 (10), p.2663-2670
Hauptverfasser: Li, J.C., Elliott, K.R., Matthews, D.S., Hitko, D.A., Zehnder, D., Royter, Y., Patterson, P.R., Hussain, T., Jensen, J.F.
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Sprache:eng
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Zusammenfassung:Differential amplifiers incorporating the advantages of both Si and III-V technologies have been fabricated in a wafer scale, heterogeneously integrated, process using both 250 nm InP DHBTs and 130 nm CMOS. These ICs demonstrated gain-bandwidth product of 40-130 GHz and low frequency gain > 45 dB . The use of InP DHBTs supports a > 6.9 V differential output swing and a slew rate > 4 times 10 4 V/mus to be achieved with as low as 40 mW dissipated power. A novel on-chip buffer circuit is used to facilitate the on-wafer characterization of these amplifiers. To the authors' knowledge, this is the first demonstration of a high performance IC building block in a heterogeneously integrated process technology.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2009.2026819