A 5.75 to 44 Gb/s Quarter Rate CDR With Data Rate Selection in 90 nm Bulk CMOS

This paper presents a quarter-rate clock and data recovery (CDR) circuit for plesiochronous serial I/O-links. The 2times-oversampling phase-tracking CDR, implemented in 90 nm bulk CMOS technology, covers the whole range of data rates from 5.75 to 44 Gb/s realized in a single IC by the novel feature...

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Veröffentlicht in:IEEE journal of solid-state circuits 2009-07, Vol.44 (7), p.1927-1941
Hauptverfasser: Rodoni, L., von Buren, G., Huber, A., Schmatz, M., Jackel, H.
Format: Artikel
Sprache:eng
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Zusammenfassung:This paper presents a quarter-rate clock and data recovery (CDR) circuit for plesiochronous serial I/O-links. The 2times-oversampling phase-tracking CDR, implemented in 90 nm bulk CMOS technology, covers the whole range of data rates from 5.75 to 44 Gb/s realized in a single IC by the novel feature of a data rate selection logic. Input data are sampled with eight parallel differential master-slave flip-flops, where bandwidth enhancement techniques were necessary for 90 nm CMOS. Precise and low-jitter local clock phases are generated by an analog delay-locked loop. These clock phases are aligned to the incoming data by four parallel phase rotators. The phase-tracking loop of the CDR is realized as a digital delay-locked loop and is therefore immune against process tolerances. The CDR is able to track a maximum frequency deviation of plusmn615 ppm between incoming data and a local reference clock and fulfills the extended XAUI jitter tolerance mask. A bit error rate
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2009.2021913