A Sub- \mu s Wake-Up Time Power Gating Technique With Bypass Power Line for Rush Current Support
A sub-mus wake-up time power gating technique was developed for low-power SoCs. It uses two types of power switches and a separated power line bypassing rush current to suppress power-supply-voltage fluctuation. We applied this technique to a heterogeneous dual-core microprocessor fabricated in 90 n...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2009-04, Vol.44 (4), p.1178-1183 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A sub-mus wake-up time power gating technique was developed for low-power SoCs. It uses two types of power switches and a separated power line bypassing rush current to suppress power-supply-voltage fluctuation. We applied this technique to a heterogeneous dual-core microprocessor fabricated in 90 nm CMOS technology. When wake-up time on the 2M-gate scale circuit was set to 0.24 mus , the supply voltage fluctuation was suppressed to 2.5 mV. The area overhead of this technique was less than 1% of the total die area. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2009.2014201 |