Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology

In this paper, two fully integrated voltage-controlled oscillators (VCOs) in a 200-GHz f/sub T/ SiGe bipolar technology are presented. The oscillators use on-chip transmission lines at the output for impedance transformation. One oscillator operates up to 98 GHz and achieves a phase noise of -85dBc/...

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Veröffentlicht in:	IEEE journal of solid-state circuits 2004-10, Vol.39 (10), p.1773-1777
Hauptverfasser:	Perndl, W., Knapp, H., Aufinger, K., Meister, T.F., Simburger, W., Scholtz, A.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Circuits Consumption Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Frequency Germanium silicon alloys Impedance Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Noise Noise measurement Offsets Oscillators Oscillators, resonators, synthetizers Phase measurement Phase noise Power generation Silicon germanides Silicon germanium Transformations Voltage controlled oscillators
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Beschreibung
Zusammenfassung:	In this paper, two fully integrated voltage-controlled oscillators (VCOs) in a 200-GHz f/sub T/ SiGe bipolar technology are presented. The oscillators use on-chip transmission lines at the output for impedance transformation. One oscillator operates up to 98 GHz and achieves a phase noise of -85dBc/Hz at an offset frequency of 1 MHz. It can be tuned from 95.2 to 98.4 GHz and it consumes 12 mA from a single -5-V supply. The second oscillator operates from 80.5 GHz up to 84.8 GHz with a phase noise of -87dBc/Hz at 1-MHz offset frequency. The output power of both circuits is about -6dBm.
ISSN:	0018-9200 1558-173X
DOI:	10.1109/JSSC.2004.833757