Broadband ESD protection circuits in CMOS technology

Broadband ESD protection circuits in CMOS technology

A broadband technique using monolithic T-coils is applied to electrostatic discharge (ESD) structures for both input and output pads. Fabricated in 0.18-/spl mu/m CMOS technology, the prototypes achieve operation at 10 Gb/s while providing a return loss of -20 dB at 10 GHz. The human-body model tole...

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Veröffentlicht in:IEEE journal of solid-state circuits 2003-12, Vol.38 (12), p.2334-2340
Hauptverfasser: Galal, S., Razavi, B.
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Broadband
Circuit simulation
Circuits
CMOS
CMOS technology
Data communication
Electrostatic discharge
Electrostatic discharges
Impedance matching
Microprocessors
Noise levels
Parasitic capacitance
Protection
Prototypes
Tolerances
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Beschreibung
Zusammenfassung:A broadband technique using monolithic T-coils is applied to electrostatic discharge (ESD) structures for both input and output pads. Fabricated in 0.18-/spl mu/m CMOS technology, the prototypes achieve operation at 10 Gb/s while providing a return loss of -20 dB at 10 GHz. The human-body model tolerance is 1000 V for the input structure and 800-900 V for the output structure.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2003.818568