Computer-aided design in VLSI device development

Computer-aided design (CAD) has been used extensively in the development of VLSI MOS technology at Hewlett-Packard Laboratory. The CAD system for MOS device design is described. The development of the p-channel transistor with submicrometer channel length, trench isolation in CMOS, and side-wall-mas...

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Veröffentlicht in:	IEEE journal of solid-state circuits 1985-04, Vol.20 (2), p.495-500
Hauptverfasser:	Cham, K.M., Oh, S.-Y., Moll, J.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit simulation CMOS technology Design automation Electronics Exact sciences and technology Integrated circuit interconnections Integrated circuits Isolation technology Laboratories MOS devices Nonhomogeneous media Parasitic capacitance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Very large scale integration
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