A MOS switched-capacitor instrumentation amplifier

Describes a precision switched-capacitor sampled-data instrumentation amplifier using NMOS polysilicon gate technology. It is intended for use as a sample-and-hold amplifier for low level signals in data acquisition systems. The use of double correlated sampling technique achieves high power supply...

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Veröffentlicht in:IEEE journal of solid-state circuits 1982-12, Vol.17 (6), p.1008-1013
Hauptverfasser: Yen, R.C., Gray, P.R.
Format: Artikel
Sprache:eng
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Beschreibung
Zusammenfassung:Describes a precision switched-capacitor sampled-data instrumentation amplifier using NMOS polysilicon gate technology. It is intended for use as a sample-and-hold amplifier for low level signals in data acquisition systems. The use of double correlated sampling technique achieves high power supply rejection, low DC offset, and low 1/f noise voltage. Matched circuit components in a differential configuration minimize errors from switch channel charge injection. Very high common mode rejection (120 dB) is obtained by a new sampling technique which prevents the common mode signal from entering the amplifier. This amplifier achieves 1 mV typical input offset voltage, greater than 95 dB PSRR, 0.15 percent gain accuracy, 0.01 percent gain linearity, and an RMS input referred noise voltage of 30 /spl mu/V/input sample.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1982.1051854